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Effects of Irradiation on the Electrical Properties of Alpha-Quartz Crystals

Published online by Cambridge University Press:  28 February 2011

S. Ling
Affiliation:
Henry Krumb School of Mines, Columbia University, New York NY 10027
B. S. Lim
Affiliation:
Henry Krumb School of Mines, Columbia University, New York NY 10027
A. S. Nowick
Affiliation:
Henry Krumb School of Mines, Columbia University, New York NY 10027
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Abstract

A study is made of irradiation effects on α-quartz crystals using the techniques of electrical conductivity and dielectric loss measurements. The initial radiation-induced conductivity (RIC) induced by X-ray irradiation over the temperature range from 94 to 250 K is found to have a nearly constant activation energy of 0.29 ± 0.02 eV. Since a large RIC still results from irradiation at temperatures too low for alkalis to be liberated, it is proposed that the RIC is due to holes (as small polarons) rather than to alkalis. The dielectric loss measurements in Na-swept quartz are used to follow the changes in the relaxation peaks due to the Al-Na defect as a function of radiation dose and annealing. At the same time a low-temperature “irradiation peak” is studied. Restoration of the main Al-Na peak during annealing occurs in two stages: one near 500 K and the other above 600 K. From the observed behavior of the irradiation peak in various crystals, it is concluded that this peak is probably due to alkali centers. Finally, a defect model interpreting the two annealing stages is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

1. King, J.C. and Sander, H.H., Rad. Effects 26, 203 (1975).Google Scholar
2. Pelligrini, P., Euler, F., Kahan, A., Flanagan, T.M. and Wrobel, T.F., IEEE Trans. Nucl. Sci. NS–25, 1267 (1978).CrossRefGoogle Scholar
3. Halliburton, L.E., Koumvakalis, N., Markes, M.E. and Martin, J.J., J. Appl. Phys. 52. 3565 (1981).Google Scholar
4. King, J.C., Bell Syst. Tech. J. 38, 573 (1959).CrossRefGoogle Scholar
5. Kats, A., Philips Res. Rep. 17 133 (1962).Google Scholar
6. Brown, R.N. and Kahan, A., J. Phys. Chem. Solids 36, 467 (1975).Google Scholar
7. Lipson, H.G. and Kahan, A., J. Appl. Phys. 58, 963 (1985).Google Scholar
8. Jain, H. and Nowick, A.S., J. Appl. Phys. 53, 477 (1982).Google Scholar
9. Hughes, R.C., Rad. Effects 26, 225 (1975).Google Scholar
10. Jain, H. and Nowick, A.S., J. Appl. Phys. 53, 485 (1982).Google Scholar
11. Green, E.R., Toulouse, J., Wacks, J. and Nowick, A.S., in Proc. 38th Ann. Symp. on Freq. Control IEEE Cat. No. 84CH2062–8, 1984, pp. 32–37.Google Scholar
12. Stevels, J.M. and Volger, J., Philips Res. Rep. 17, 283 (1962).Google Scholar
13. Park, D.S. and Nowick, A.S., Phys. Stat, Sol. (a) 26, 617 (1974).CrossRefGoogle Scholar
14. Toulouse, J. and Nowick, A.S., J. Phys. Chem. Solids 46, 1285 (1985)Google Scholar
15. de Vos, W.J. and Volger, J., Physica 34, 272 (1967); 47, 13 (1970).CrossRefGoogle Scholar
16. Markes, M.E. and Halliburton, L.E., J. Appl. Phys. 50, 8172 (1980).Google Scholar
17. Adler, D., in Treatise on Solid State Chemistry Vol. II, edited by Hannay, N.B. (Plenum Press, New York, 1975), Chap. 4.Google Scholar
18. DiStefano, T.H. and Eastman, D.E., Phys. Rev. Lett. 27, 1560 (1971).Google Scholar
19. Martin, J.J., J. Appl. Phys. 56, 2536 (1984).Google Scholar
20. Martin, J.J., Hwang, H.B. and Bahadur, H., in Proc. 39th Freq. Control Symp, IEEE, 1985.Google Scholar
21. Halliburton, L.E., private communication.Google Scholar
22. Toulouse, J. and Nowick, A.S., in Defect Properties and Processing of High Technology Nonmetalllc Materials, edited by Crawford, J.H. et al. (North Holland, New York, 1984) pp. 149157.Google Scholar
23. Jani, M.G., Bossoli, R.B. and Halliburton, L.E., Phys. Rev. B 27, 2285 (1983).Google Scholar