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Effects of Interfaces on the a-Si:H Schottky Barrier Characteristics

Published online by Cambridge University Press:  25 February 2011

Y. M. Li ,
C. Malone ,
S. Kumar ,
C. R. Wronski ,
H. V. Nguyen  and
R. W. Collins
Y. M. Li
Affiliation:
Also with the Department of Physics
C. Malone
Affiliation:
Center for Electronic Materials and Processing, Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802
S. Kumar
Affiliation:
Center for Electronic Materials and Processing, Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802
C. R. Wronski
Affiliation:
Also with Department of Engineering Science, and Materials Research Laboratory
H. V. Nguyen
Affiliation:
Materials Research Laboratory and Department of Physics, The Pennsylvania State University, University Park, PA 16802
R. W. Collins
Affiliation:
Materials Research Laboratory and Department of Physics, The Pennsylvania State University, University Park, PA 16802
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Abstract

A detailed study of hydrogenated amorphous silicon (a-Si:H) surfaces during etching and subsequent low temperature (T≤200°C) oxidation was carried out using in-situ and spectroscopic ellipsometry (SE). The microstructural information from SE is correlated with the properties of the corresponding evaporated Pd Schottky barrier structures. Oxide layers thinner than ∼ 10 Å have little effect on the diode characteristics and electron surface recombination velocities. This is consistent with a porous structure for these oxides. Evidence is found from growth kinetics that higher density, compact oxide growth occurs for greater thicknesses. These oxides have a large effect on electron transport and surface recombination velocities consistent with the formation of metal-insulator-semiconductor structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 219
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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