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Effects of Indium Preamorphization on Boron Implanted Silicon Annealed by RTA

Published online by Cambridge University Press:  28 February 2011

E. Ganin ,
G. Scilla ,
T. O. Sedgwick  and
G. A. Sai-Halasz
E. Ganin
Affiliation:
IBM T.J. Watson Research Center Yorktown Heights, NY 10598
G. Scilla
Affiliation:
IBM T.J. Watson Research Center Yorktown Heights, NY 10598
T. O. Sedgwick
Affiliation:
IBM T.J. Watson Research Center Yorktown Heights, NY 10598
G. A. Sai-Halasz
Affiliation:
IBM T.J. Watson Research Center Yorktown Heights, NY 10598
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Abstract

Preamorphization by indium of boron implanted silicon layers has been studied as a means of reducing defects in the annealed and activated shallow junctions. The In preamorphized samples after RTP annealing at 950 to 1150°C show an absence of spanning dislocations. A 5 sec. anneal at 1100 °C results in the complete annihilation of residual dislocation loops at the original crystalline/amorphous (c/a) interface. The minimum dose to preamorphize Si with 200keV In was 5×1013/cm2. During annealing the In was found to localize at two peaks, one at the original c/a interface and the other closer to the surface, where In precipitation was observed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 717
Copyright
Copyright © Materials Research Society 1987

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