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The Effects of Hydrogen Profiling and of Light-Induced Degradation on the Electronic Properties of Hydrogenated Nanocrystalline Silicon

Published online by Cambridge University Press:  01 February 2011

A.F. Halverson ,
J.J. Gutierrez ,
J.D. Cohen ,
Baojie Yan ,
Jeffrey Yang  and
Subhendu Guha
A.F. Halverson
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
J.J. Gutierrez
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
J.D. Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
Baojie Yan
Affiliation:
United Solar Ovonic Corporation, 1100 W. Maple Road, Troy, MI 48084, U.S.A.
Jeffrey Yang
Affiliation:
United Solar Ovonic Corporation, 1100 W. Maple Road, Troy, MI 48084, U.S.A.
Subhendu Guha
Affiliation:
United Solar Ovonic Corporation, 1100 W. Maple Road, Troy, MI 48084, U.S.A.
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Abstract

The electronic properties of hydrogenated nanocrystalline silicon (nc-Si:H) were studied using junction capacitance methods. Drive-level capacitance profiling (DLCP) measurements revealed significant differences for nc-Si:H layers deposited under constant hydrogen dilution compared to those deposited using hydrogen profiling, with lower DLCP densities in the latter case. Transient photocapacitance (TPC) measurements revealed the mixed-phase nature of these materials. It disclosed spectra that appeared quite microcrystalline-like at lower temperatures, but more similar to a-Si:H at higher temperatures where the minority carrier collection is higher in the nanocrystalline component of these samples. This then suppresses the TPC signal from this component compared to the a-Si:H component. In contrast, because transient photocurrent signals are enhanced by the additional minority carrier collection, those spectra appear microcrystalline like at all temperatures. We also investigated the effects of light-induced degradation in these devices. This caused a dramatic decrease in hole collection, similar to that caused by reducing the measurement temperature of the samples. However, the light exposure did not appear to increase the deep defect density (dangling bonds).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A13.7
Copyright
Copyright © Materials Research Society 2005

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