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Effects of Heating Samples on the Extended Defect Generation During Pulsed Electron Beam Annealing of Silicon

Published online by Cambridge University Press:  22 February 2011

M. Pitaval ,
M. Ambri ,
M. Tholomier ,
D. Barbier ,
G. Chemisky  and
A. Laugier
M. Pitaval
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard – LYON I, 43 Boulevard du 11 Novembre 1918, 69622 VILLEURBANNE Cédex
M. Ambri
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard – LYON I, 43 Boulevard du 11 Novembre 1918, 69622 VILLEURBANNE Cédex
M. Tholomier
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard – LYON I, 43 Boulevard du 11 Novembre 1918, 69622 VILLEURBANNE Cédex
D. Barbier
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard – LYON I, 43 Boulevard du 11 Novembre 1918, 69622 VILLEURBANNE Cédex Laboratoire de Physique de la Matiére, Institut National des Sciences Appliquées de LYON, 20 Avenue Albert Einstein, 69621 VILLEURBANNE Cédex
G. Chemisky
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard – LYON I, 43 Boulevard du 11 Novembre 1918, 69622 VILLEURBANNE Cédex Laboratoire de Physique de la Matiére, Institut National des Sciences Appliquées de LYON, 20 Avenue Albert Einstein, 69621 VILLEURBANNE Cédex
A. Laugier
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard – LYON I, 43 Boulevard du 11 Novembre 1918, 69622 VILLEURBANNE Cédex Laboratoire de Physique de la Matiére, Institut National des Sciences Appliquées de LYON, 20 Avenue Albert Einstein, 69621 VILLEURBANNE Cédex
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Abstract

A non destructive SEM observation method has been applied to investigate the extended defects created by pulsed electron beam annealing of arsenic–implanted silicon. The defect study was performed on bevelled samples after irradiation using variable beam fluences for both a 20°C or a 450°C specimen starting temperature. Dislocation generation resulting in subgrain boundaries formation occurs during regrowth of the silicon layer which has been heated up to the melt point or higher. For the rather penetrating electron beam pulse used in this work the subgrain size and their depth extent depend on the beam fluence and the substrate temperature. For 450°C pre‐heated samples, annealing of the arsenic implant is possible without any stable extended defect creation using the 1.0 – 1.2 J.cm−2 fluence range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 363
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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