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The Effects of Halogen Exposure on the Photoluminescence of Porous Silicon

Published online by Cambridge University Press:  25 February 2011

Jeffrey M. Lauerhaas  and
Michael J. Sailor
Jeffrey M. Lauerhaas
Affiliation:
Department of Chemistry, The University of California at San Diego, La Jolla, CA 92093-0506
Michael J. Sailor
Affiliation:
Department of Chemistry, The University of California at San Diego, La Jolla, CA 92093-0506
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Abstract

Interaction of I2 vapor with luminescent porous silicon (PS) results in a mixed hydrogen/iodine terminated surface. The photoluminescence (PL) of PS is completely quenched upon I2 exposure. Excess iodine can be removed by pumping on the PS for several hours, resulting in partial recovery of the original PL spectrum. Exposing the hydrogen/iodine terminated PS to air results in the accelerated growth of an oxide layer and increased PL. The adsorption of iodine is postulated to induce surface traps that are responsible for the luminescence quenching observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 259
Copyright
Copyright © Materials Research Society 1993

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