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The Effects of Growth Sequence on the Electronic Properties of Al-Ge-Ni Ohmic Contacts on (001) GaAs

Published online by Cambridge University Press:  25 February 2011

W. V. Lampert ,
T. W. Haas ,
E. S. Lambers  and
Paul H. Holloway
W. V. Lampert
Affiliation:
The Materials Directorate of Wright Laboratory (WL/MLBM), Wright-Patterson Air Force Base, Ohio 45433–6533
T. W. Haas
Affiliation:
The Materials Directorate of Wright Laboratory (WL/MLBM), Wright-Patterson Air Force Base, Ohio 45433–6533
E. S. Lambers
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611–2066
Paul H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611–2066
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Abstract

The growth sequence of Al, Ge, and Ni metals was shown to dramatically affect the amount of heat treatment time required to convert the electrical properties from Schottky to ohmic behavior. Differences in the heat treatment times required to convert from rectifying to ohmic contact were dependent on the doping concentration of the contact layer and on the heat treatment temperature. Interdiffusion of component elements and phase formation have been studied to determine the origin of these effects. Auger depth profiles and X-ray diffraction have been used to determine the interdiffusion and phase formation resulting from various types of thermal processing. Elemental profiles and identification of phases of Ni-Ga, Ni-As, and Ni-Ga-Ge will be used to explain the origin of ohmic behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 695
Copyright
Copyright © Materials Research Society 1993

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References

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