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Effects Of Grain Boundaries on the Resistivity of Cosputtered Wsi2 Films

Published online by Cambridge University Press:  15 February 2011

D. R. Campbell ,
S. Mader  and
W. K. Chu
D. R. Campbell
Affiliation:
IBM Corporation, Route 52, Hopewell Junction, NY 12533 (U.S.A.)
S. Mader
Affiliation:
IBM Corporation, Route 52, Hopewell Junction, NY 12533 (U.S.A.)
W. K. Chu
Affiliation:
IBM Corporation, Route 52, Hopewell Junction, NY 12533 (U.S.A.)
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Abstract

Resistivity and grain size measurements on thin films of co-sputtered WSi2 show that the resistivity in this material is dominated by grain boundary scattering. The reflection coefficient for the transport of charge carriers through the grain boundaries was determined to be approximately 0.9.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 351
Copyright
Copyright © Materials Research Society 1982

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References

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