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Effects of Gas Environments on Porous Silicon Photoluminescence

Published online by Cambridge University Press:  10 February 2011

G. Di Francia ,
V. La Ferrara ,
L. Lancellotti ,
L. Quercia  and
T. Fasolino
G. Di Francia
Affiliation:
ENEA Centro Ricerche Portici, 1-80055 Portici, (Italy)
V. La Ferrara
Affiliation:
INFM Dipartimento di Scienze Fisiche, Mostra d'Oltremare, 80100 Napoli, (Italy)
L. Lancellotti
Affiliation:
INFM Dipartimento di Scienze Fisiche, Mostra d'Oltremare, 80100 Napoli, (Italy)
L. Quercia
Affiliation:
ENEA Centro Ricerche Portici, 1-80055 Portici, (Italy)
T. Fasolino
Affiliation:
ENEA Centro Ricerche Portici, 1-80055 Portici, (Italy)
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Abstract

The photoluminescence response of a series of porous silicon samples, obtained by electrochemical etching of n-type CZ-silicon, has been recorded in various gas environments. A quenching is reported when porous silicon is in the presence of an oxidising ambient (dry air or acetone vapours in dry air). Process reversibility depends on the duration of laser illumination. Quenching is also recorded if porous silicon is in the presence of acetone vapours in nitrogen ambient, where complete reversibility is however shown. Moreover, the peak wavelength is red shifted in dry air and blue shifted in acetone vapours. Irreversible quenching is related to the growth of a thin oxide layer on the emitting nanostrucures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 191
Copyright
Copyright © Materials Research Society 1999

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References

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