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Effects of Fluorine on MOS Properties

Published online by Cambridge University Press:  03 September 2012

T. P. Ma
T. P. Ma*
Affiliation:
Yale University, Center for Microelectronic Materials & Structures, and Department of Electrical Engineering, New Haven, Connecticut 06520, USA
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Abstract

The incorporation of small amounts of fluorine has been found to improve the properties of MOS devices. In this paper, some of these results will be reviewed, several techniques to introduce fluorine will be described, the distributions of F resulting from these processes will be shown, and the possible mechanisms leading to the improved MOS device reliability will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 741
Copyright
Copyright © Materials Research Society 1992

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References

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