Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:28:23.862Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Dopants on the Nucleation and Growth of NiSi2 on Silicon

Published online by Cambridge University Press:  25 February 2011

S. W. Lu ,
C. W. Nieh ,
J. J. Chu  and
L. J. Chen
S. W. Lu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C. W. Nieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J. J. Chu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

The influences of implantation impurities, including BF2, B, F, As and P on the formation of epitaxial NiSi2 in nickel thin films on ion-implanted silicon have been investigated by transmission electron microscopy.

The presence of BF2, B, and F atoms was observed to promote the epitaxial growth of NiSi2 at low temperatures. Little or no effect on the formation of NiSi2 was found in samples implanted with As or P ions.

The results indicated that the influences of the implantation impurities are not likely to be electronic in origin. Good correlation, on the other hand, was found between the atomic size factor and resulting stress and NiSi2 epitaxy at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 39
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wittmer, M. and Seidel, T.E., J. Appl. Phys. 49, 5827 (1978).CrossRefGoogle Scholar
2. Ohdomari, I., Akiyama, M., Maeda, T., Hori, M., Takebayashi, C., Ogura, A., Chikyo, T., Imura, I., Yoneda, K., and Tu, K.N., J. Appl. Phys. 56, 2725 (1984).Google Scholar
3. Ohdomari, I., Konuma, K., Takano, M., Chikyow, T., Kawarada, H., Nakanishi, J., and Ueno, T., Mater. Res. Soc. Symp. Proc. 54, 63 (1986).CrossRefGoogle Scholar
4. Wittmer, M., Ting, C.Y., and Tu, K.N., J. Appl. Phys. 54, 699 (1983).Google Scholar
5. Lu, S.W., Nieh, C.W., and Chen, L.J., Appl. Phys. Lett. 49, 1772 (1986).Google Scholar
6. Olowolafe, J. O., Nicolet, M.A., and Mayer, J.W., Thin Solid Films 38, 143 (1976).Google Scholar
7. Tu, K. N. and Mayer, J.W., in Thin-Films - Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J. W. (Wiley, New York, 1978), p. 359.Google Scholar
8. Tung, R. T., Gibson, J.M., and Poate, J.M., Phys. Rev. Lett. 50, 429 (1983).Google Scholar
9. Wittmer, M. and Tu, K.N., Phys. Rev. B 27, 1173 (1983).CrossRefGoogle Scholar
10. Cohen, S. S., Placente, P.A., Gildenblat, G., and Brown, D.M., J. Appl. Phys. 53, 8856 (1982).CrossRefGoogle Scholar
11. d'Heurle, F. M. and Gas, P., J. Mater. Res. 1, 205 (1986),CrossRefGoogle Scholar
12. Christian, J. W., The Theory of Transformation in Metals and Alloys, Part I, Second Ed. (Pergamon, Oxford, 1975).Google Scholar
13. Suni, I., Goltz, G., Grimaldi, M.G., Nicolet, M.A., and Lau, S.S., Appl. Phys. Lett. 40, 269 (1982).Google Scholar
14. Liotoila, A., Wakita, A., Sigmon, T.W., and Gibbons, J.F., J. Appl. Phys. 53, 4399 (1982).CrossRefGoogle Scholar
15. Wolf, H.F., Silicon Semiconductor Data, First Ed. (Pergamon Press, Oxford, 1969).Google Scholar