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Effects of Diluted-Hydrogen and Hydrogen-Atom-Treatment on the Silicon-Hydrogen Bonding Configurations of Hydrogenated Silicon Films

Published online by Cambridge University Press:  28 February 2011

K. C. Hsu ,
H. Chang  and
H. L. Hwang
K. C. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing—Hua University, Hsin—Chu, Taiwan, R.O.C.
H. Chang
Affiliation:
Department of Chemistry, National Tsing—Hua University, Hsin—Chu, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing—Hua University, Hsin—Chu, Taiwan, R.O.C.
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Abstract

The silicon—hydrogen bonding configuration studies of hydrogenated silicon films that were fabricated by diluted—hydrogen and hydrogen—atom—treatment methods are presented. The diluted—hydrogen samples tend to show a very sharp line—shape in the NMR spectra as the H2/SiH4 dilution ratio is increased and/or temperature is elevated. The addition of atomic hydrogen treatment can produce the same NMR spectra at a temperature lower than 200°C. The Raman scattering spectra show that the μc—Si phase can be formed by the atomic hydrogen treatment. The infrared absorption spectra also indicate an increase of SiH2 bonding configuration and a hydrogen content reduction when atomic hydrogen treatment is employed. These results suggest that the degree of crystallinity of hydrogenated silicon films can be systematically adjusted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 603
Copyright
Copyright © Materials Research Society 1993

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References

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