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Effects of Curing Time on Properties of Spin-On Glass as Low-Temperature Insulator

Published online by Cambridge University Press:  14 February 2013

Miguel A. Dominguez ,
Pedro Rosales ,
Alfonso Torres  and
Mario Moreno
Miguel A. Dominguez
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Pedro Rosales
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Alfonso Torres
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Mario Moreno
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
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Abstract

In this work, we report the effects of curing time on properties of SiO2 films produced from Spin-On Glass (SOG) diluted with H2O and cured at 200°C. The electrical characterization showed that the insulator breakdown field for the films produced from SOG diluted with H2O with 1 Hr of curing time was approximately 5 MV/cm while for 6.5 Hrs of curing time the breakdown field was 21 MV/cm. Also, the refractive index and surface roughness were improved with longer curing time.

Keywords

dielectric propertiesinfrared (IR) spectroscopythin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1436: Symposium K – Advanced Materials and Processes for Systems-on-Plastic , 2012 , mrss12-1436-k05-01
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Gleskova, H., Wagner, S., Gasparik, V., Kovac, P., J. Electrochem., 148, G370 (2001).CrossRefGoogle Scholar
Huang, J.J., Liu, C.J., Lin, H.C., Tsai, C.J., Chen, Y.P., Hu, G.R., Lee, C.C., J. Phys. D: Appl. Phys., 41, 245502 (2008).CrossRefGoogle Scholar
Jang, J., Cho, K., Lee, S., Kim, S., Nanotechnology, 19, 015204 (2008).CrossRefGoogle Scholar
Domínguez, M., Rosales, P., Torres, A., Molina, J., Moreno, M., De la Hidalga, F., Zuñiga, C. and Calleja, W., Proc. IEEE Electronics, Robotics and Automotive Mechanics Conference. Cuernavaca, Mexico, pp. 741–744 (2010).Google Scholar
Smith, A., Applied infrared spectroscopy, Wiley-Interscience, New York, p. 287 (1979).Google Scholar
Teng, L. and Anderson, W., Mater. Res. Soc. Symp. Proc., 483, 147 (1998).CrossRefGoogle Scholar
Chatham, H., Mogaard, M., Okuyama, Y. and Treichel, H., Mater. Res. Soc. Symp. Proc., 913, D0308 (2006).CrossRefGoogle Scholar