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Effects of Crystal Orientations on the Lowest Electronic Energy States Ordering in (GaAs)n/AlxGa1-xAs)n Superlattices

Published online by Cambridge University Press:  21 February 2011

D. N. Talwar ,
John P. Loehr  and
B. Jogai
D. N. Talwar
Affiliation:
Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705-1087
John P. Loehr
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELRA), Wright Patterson AFB, OH 45433-6543
B. Jogai
Affiliation:
University Research Center, Wright State University, Dayton, OH 45435
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Abstract

By using an empirical tight-binding method we have studied the effects of superlattice period and alloy composition on the ordering of the lowest conduction-band and valence-band states in (GaAs)n/AlxGa1-xAs)n SLs grown in the [001] and [111] directions. The calculated results of band structure are compared and discussed with the existing photoluminescence (PL) data of Hayakawa et al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 205
Copyright
Copyright © Materials Research Society 1994

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References

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4 Hayakawa, T., Takahashi, K., Kondo, M., Suyama, T., Yamamoto, S., and Hijikata, T., Phys. Rev. Lett. 60, 349 (1988); and private communication.Google Scholar
5 Talwar, D. N., John, Loehr, P., and Jogai, B. (unpublished).Google Scholar