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Effects of Charge Transfer on the Microscopic Theory of Strain-Layer Epitaxy

Published online by Cambridge University Press:  25 February 2011

Raphael Tsu ,
Fredy Zypman  and
Richard F. Greene
Raphael Tsu
Affiliation:
Department of Electrical Engineering, University of North Carolinaat Charlotte, Charlotte, NC 28223, U.S.A.
Fredy Zypman
Affiliation:
Department of Electrical Engineering, University of North Carolinaat Charlotte, Charlotte, NC 28223, U.S.A.
Richard F. Greene
Affiliation:
Department of Electrical Engineering, University of North Carolinaat Charlotte, Charlotte, NC 28223, U.S.A.
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Abstract

Whenever an atom of As is substitutionally replaced by a P-atom in a compound such as GaAs, due to the difference in ionicity, local puckering is effected by charge transfer. This paper deals with a calculation of the total energy stored, Eex = E(strain) + E(interface) = Es + Eint. For thick epilayers of GaP on GaAs, Eex is dominated by Es. However, for severalatomic layers of GaP on GaAs, the dominant stored energy is actually represented by the electrical dipole-dipole energy at the interface. The creation of dislocations may release the strain energy, it cannot affect the interface dipoleterm. Only inter-diffusion can lower the interface energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 373
Copyright
Copyright © Materials Research Society 1989

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