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Effects of buried insulator-sensor interface on the lateral conduction of high fill factor aSi:H imagers

Published online by Cambridge University Press:  17 March 2011

M. Mulato
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
F. Lemmi
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
S. E. Ready
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
J. P. Lu
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
K. Van Schuylenbergh
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
J. Ho
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
R. Lau
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
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Abstract

The pixel cross-talk is investigated in two-dimensional amorphous silicon (a-Si:H) imager arrays based on the new high fill factor design. In this configuration a continuous a-Si:H sensor extends over the whole surface of the imager, and a buried insulator material with low dielectric constant is used to separate the sensor from the underlying active matrix readout circuit. We find that the lateral conduction between neighboring pixels is mainly determined by the quality of the buried insulator-sensor interface, rather than the specific buried material itself. Minimum cross-talk values below 1% are obtained for different insulator materials including silicon oxynitride and thicker polymer based resins. The quality of this interface also affects trapping and recombination of the photogenerated carriers, influencing important imager properties such as sensitivity and image lag.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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