No CrossRef data available.
Article contents
Effects of buried insulator-sensor interface on the lateral conduction of high fill factor aSi:H imagers
Published online by Cambridge University Press: 17 March 2011
Abstract
The pixel cross-talk is investigated in two-dimensional amorphous silicon (a-Si:H) imager arrays based on the new high fill factor design. In this configuration a continuous a-Si:H sensor extends over the whole surface of the imager, and a buried insulator material with low dielectric constant is used to separate the sensor from the underlying active matrix readout circuit. We find that the lateral conduction between neighboring pixels is mainly determined by the quality of the buried insulator-sensor interface, rather than the specific buried material itself. Minimum cross-talk values below 1% are obtained for different insulator materials including silicon oxynitride and thicker polymer based resins. The quality of this interface also affects trapping and recombination of the photogenerated carriers, influencing important imager properties such as sensitivity and image lag.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2000