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Effects of Buffer Layers on Performance of Amorphous Silicon Image Sensors

Published online by Cambridge University Press:  25 February 2011

S. Miyagaki ,
S. Ri  and
K. Takasaki
S. Miyagaki
Affiliation:
Advanced Technology Development Division, FUJITSU LIMITED 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
S. Ri
Affiliation:
Advanced Technology Development Division, FUJITSU LIMITED 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
K. Takasaki
Affiliation:
Advanced Technology Development Division, FUJITSU LIMITED 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

This paper reports the effects of a-SiC:H buffer layers on a-Si:H photodiode properties, especially the dark current and decay image lag. The photodiode has an ITO/p-type a-SiC:H/a-Si:H/i-type a-SiC:H/metal structure.

Using two heterojunctions–p-SiC:H/a-Si:H at the surface contact and a-Si:H/i-SiC:H at the back contact–significantly decreases the dark current. The p-SiC:H layer blocks electron injection, and the i-SiC:H layer suppresses the reaction between the a-Si:H layer and metal electrode. The use of both a-SiC:H layers may increase decay image lag. Excess boron doping to the p-SiC:H layer induces boron diffusion into the a-Si:H photo-electric conversion layer, which increases trap levels in the a-Si:H layer. The i-SiC:H layer, because of its high resistivity, decreases the electric field applied to the a-Si:H photo-electric conversion layer. Optimizing the amount of boron in the p-SiC:H layer and the resistance of the i-SiC:H layer enabled us to produce the characteristics required for high-definition television (HDTV) image sensors–a dark current on the order of 10−10 A/cm2 and a 1% level decay image lag.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 429
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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