Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-26T21:12:25.483Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Annealing on Structural and Optical Properties of ZnO Nanowires

Published online by Cambridge University Press:  11 September 2014

Anas Mazady ,
Abdiel Rivera  and
Mehdi Anwar
Anas Mazady
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, Email: [email protected]
Abdiel Rivera
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, Email: [email protected]
Mehdi Anwar
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, Email: [email protected]
Get access

Abstract

We report, for the first time, effects of annealing of ZnO NWs grown on p-Si substrates. ZnO NWs are grown using metalorganic chemical vapor deposition (MOCVD) and thermal annealing was performed in situ under nitrogen ambient at different stages of the growth process. Increasing the annealing temperature of the ZnO seed epi-layer from 635 °C to 800 °C does not affect the morphology of the grown NWs. In contrast, annealing the NWs themselves at 800 °C results in a 48% decrease of the surface area to volume ratio of the grown NWs. The optical quality can be improved by annealing the seed layer at a higher temperature of 800 °C, although annealing the NWs themselves does not affect the defect density.

Keywords

chemical vapor deposition (CVD) (deposition)nanostructureII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials—Thin Films and Nanostructures , 2014 , pp. 21 - 25
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Rivera, A., Zeller, J., Sood, A. and Anwar, M., “A Comparison of ZnO Nanowires and Nanorods Grown Using MOCVD and Hydrothermal Processes,” J Electron Mater, vol. 42, pp. 894–900, 2013.CrossRefGoogle Scholar
Chou, H. C., Mazady, A., Zeller, J., Manzur, T. and Anwar, M., “Room-Temperature Quantum Cascade Laser: ZnO/Zn1−xMgxO Versus GaN/AlxGa1−xN,” J Electron Mater, vol. 42, pp. 882–888, 2013.CrossRefGoogle Scholar
Song, J., Zhou, J. and Wang, Z. L., “Piezoelectric and semiconducting coupled power generating process of a single ZnO belt/wire. A technology for harvesting electricity from the environment,” Nano Letters, vol. 6, pp. 1656–1662, 2006.CrossRefGoogle ScholarPubMed
Wang, J., Sun, X. W., Wei, A., Lei, Y., Cai, X., Li, C. M. and Dong, Z. L., “Zinc oxide nanocomb biosensor for glucose detection,” Appl. Phys. Lett., vol. 88, pp. 233106–233106-3, 2006.CrossRefGoogle Scholar
Cross, R., De Souza, M. and Narayanan, E. S., “A low temperature combination method for the production of ZnO nanowires,” Nanotechnology, vol. 16, pp. 2188, 2005.CrossRefGoogle ScholarPubMed
Børseth, T. M., Svensson, B., Kuznetsov, A. Y., Klason, P., Zhao, Q. and Willander, M., “Identification of oxygen and zinc vacancy optical signals in ZnO,” Appl. Phys. Lett., vol. 89, pp. 262112, 2006.CrossRefGoogle Scholar
Chen, Y., Cao, M., Wang, T. and Wan, Q., “Microwave absorption properties of the ZnO nanowire-polyester composites,” Appl. Phys. Lett., vol. 84, pp. 3367–3369, 2004.CrossRefGoogle Scholar
Özgür, Ü., Alivov, Y. I., Liu, C., Teke, A., Reshchikov, M., Doğan, S., Avrutin, V., Cho, S. and Morkoc, H., “A comprehensive review of ZnO materials and devices,” J. Appl. Phys., vol. 98, pp. 041301, 2005.CrossRefGoogle Scholar
Lee, Y., Hu, S., Water, W., Tiong, K., Feng, Z., Chen, Y., Huang, J., Lee, J., Huang, C. and Shen, J., “Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates,” J Lumin, vol. 129, pp. 148–152, 2009.CrossRefGoogle Scholar