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Effects of Alloying on Properties of NiSi for CMOS Applications

Published online by Cambridge University Press:  17 March 2011

Mark van Dal ,
Amal Akheyar ,
Jorge A. Kittl ,
Oxana Chamirian ,
Muriel De Pottera ,
Caroline Demeurisse ,
Anne Lauwers  and
Karen Maex
Mark van Dal
Affiliation:
Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, Belgium
Amal Akheyar
Affiliation:
Affiliate researcher at IMEC from Infineon
Jorge A. Kittl
Affiliation:
Affiliate researcher at IMEC from Texas Instruments
Oxana Chamirian
Affiliation:
E.E. Department K.U. Leuven, Belgium
Muriel De Pottera
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Caroline Demeurisse
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Anne Lauwers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Karen Maex
Affiliation:
E.E. Department K.U. Leuven, Belgium IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Effects of alloying Ni with Pt and Ta on silicide properties for CMOS technology have been studied. It was found that Pt is soluble in NiSi, which is in line with literature, whereas Ta segregates towards the surface during thermal treatment. Additionally, Ta retards NiSi formation at low temperature. Thermal stability of NiSi on Si is improved more efficiently by alloying Ni with Pt compared to Ta. Silicide/diffusion contact resistance is extracted using the Transmission Line Structure. In our experiments, contact resistivity appeared to be virtually unaffected with respect to the alloying element. Thermal stability on narrow poly Si structures was also improved when Ni was alloyed with Pt. Similar leakage currents for Ni and Ni(Pt) silicides on N+ and P+ junctions were obtained. The results presented in this work suggest that Pt is a better candidate as alloying element to improve NiSi thermal stability for CMOS processes than Ta.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C4.5
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Kittl, J.A. et al. , Mater. Res. Soc. Symp. Proc. 765 D7-5 Spring meeting 2003.Google Scholar
2. Sun, M.C. et al. , Symp. on VLSI Tech. 81 (2003).Google Scholar
3. Wang, R.N. and Feng, J.Y., J. Phys.: Condens. Matter 15 1935 (2003).Google Scholar
4. Mangelinck, D., Dai, J.Y., Pan, J.S. and Lahiri, S.K., Appl. Phys. Lett. 75 1736 (1999).Google Scholar
5. Scott, D.B., Chapman, R.A., Wei, C., Mahant-Shetti, S. S., Haken, R.A. and Holloway, T. C., IEEE Trans. Electron Devices 34 562 (1987).Google Scholar
6. Akheyar, A. et al. , Proc. ECS 2003, 27th of April Paris (France) 2003.Google Scholar
7. Sze, S.M., “Physics of Semiconductors Devices” 2nd Ed. (John Wiley & Sons, 1981) pp. 304–306.Google Scholar