Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-06T01:14:34.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of ZnO Nanowire Doping on the Properties of Poly(3-hexylthiophene) Schottky Diodes

Published online by Cambridge University Press:  31 January 2011

Rachel S. Aga ,
R. Aga Jr.  and
R. Mu
Rachel S. Aga
Affiliation:
[email protected], Wright State University, Department of Chemistry, Dayton, Ohio, United States
R. Aga Jr.
Affiliation:
[email protected], Fisk University, Department of Physics, Nashville, Tennessee, United States
R. Mu
Affiliation:
[email protected], Fisk University, Department of Physics, Nashville, Tennessee, United States
Get access

Abstract

Doping polymers with inorganic nanomaterials to form hybrid nanocomposites is an attractive approach to develop new lightweight optoelectronic materials with unique or improved properties. In this work, poly(3-hexylthiophene) (P3HT) Schottky diodes, doped with ZnO nanowires at different P3HT-to-ZnO concentrations, were studied. Device fabrication was carried out by drop casting the nanocomposite on a Pt electrode followed by thermal evaporation of an Al top electrode. ZnO nanowires were prepared via a physical vapor method with Zn as a source. The nanowires were dispersed in chlorobenzene, then the P3HT powder was added. Properties of the diodes were investigated using capacitance-voltage and current-voltage measurements. In addition, electrical resistance of the nanocomposite films was also investigated using a two-point probe measurement with Pt as Ohmic contacts. Results showed that ZnO nanowire doping decreases the built in potential of the diode and the electrical resistance of the nanocomposite film.

Keywords

energy generationoptoelectronicorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1212: Symposium S – Organic Materials and Devices for Sustainable Energy Systems , 2009 , 1212-S11-08
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Winey, K., and Vaia, R., MRS Bulletin 32, 314 (2007)Google Scholar
2 Li, G., Shrotriya, V., Huang, J., Yao, Y., Moriarty, T., Emery, K., and Yang, Y., Nat. Mat. 4, 864 (2005)Google Scholar
3 Li, Y., Rizzo, A., Mazzeo, M., Carbone, L., Manna, L., Cingolani, R., and Gigli, G., J. Appl. Phys. 97, 113501 (2005).Google Scholar
4 Xu, Z-X., Roy, V., Stallinga, P., Muccini, M., SToffanin, ., Xiang, H-F., and Che, C-M., Appl. Phys. Lett. 90, 223509 (2007).Google Scholar
5 Beek, W., Wienk, M., and Janssen, R., Adv. Func. Mater. 16, 1112 (2006).Google Scholar
6 Olson, D., Shaheen, S., Collins, R., and Ginley, D., J. Phys. Chem. C. 111, 16670 (2007).Google Scholar
7 Aga, R.S. Jr., Gunther, D., Ueda, A., Pan, Z., Collins, W.E., Mu, R., and Singer, K., Nanotechnology 20, 465204 (2009).Google Scholar
8 Takanezawa, K., Hirota, K., Wei, Q-S., Tajima, K., and Hashimoto, K., J. Phys. Chem. C. 111, 7218 (2007).Google Scholar
9 Sze, S., Physics of Semiconductor Devices 2ndEd, John Wiley & Sons, Inc. USA, p. 79 (1981)Google Scholar