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The Effect of Thermally Induced Stresses on Electromigration Lifetime Of Near-Bamboo Interconnects

Published online by Cambridge University Press:  21 February 2011

M.A. Korhonen ,
P. BØrgesen ,
D.D. Brown  and
Che-Yu Li
M.A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
P. BØrgesen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
D.D. Brown
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
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Abstract

Thermal stresses may affect significantly electromigration induced open failures in nearbamboo interconnect structures ending in W-vias. Based on a physical model, we investigate the thermal stress effects on void nucleation, on early failures due to grain boundary diffusion, and on longer term bulk diffusion dominated failures. It is shown that thermal stress is all important as far as early failures are concerned. In particular, during accelerated tests and service, the early failures, when occur, arise due to stress and current directed grain boundary diffusion along grain clusters. In the accelerated test, bulk diffusion dominated void growth at vias determines the long term failures while during service bulk diffusion contribution is usually negligibly small within time frames of practical interest. Because the dominant failure mechanisms change, the extrapolation from the accelerated tests to the service conditions is not straight-forward.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 121
Copyright
Copyright © Materials Research Society 1993

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