Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T01:47:23.248Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of the Surface on Optical properties of AlGaAs/GaAs heterostructures with double 2-DEG

Published online by Cambridge University Press:  05 March 2013

L. Zamora-Peredo ,
I. Cortes-Mestizo ,
L. García-Gonzalez ,
J. Hernandez-Torres ,
D. Vázquez-Cortes ,
S. Shimomura ,
A. Cisneros ,
V. Méndez-García  and
M. Lopez-Lopez
L. Zamora-Peredo*
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
I. Cortes-Mestizo
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
L. García-Gonzalez
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
J. Hernandez-Torres
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
D. Vázquez-Cortes
Affiliation:
Graduate School of Science and Engineering, Ehime University, 3 Bukyo-cho, Matsuyama, Ehime 790-8577, Japan.
S. Shimomura
Affiliation:
Graduate School of Science and Engineering, Ehime University, 3 Bukyo-cho, Matsuyama, Ehime 790-8577, Japan.
A. Cisneros
Affiliation:
Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología, Universidad Autónoma de San Luis Potosí, Av. Karakorum No. 1470, Lomas 4a Secc., San Luis Potosí, S.L.P. 78210, México.
V. Méndez-García
Affiliation:
Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología, Universidad Autónoma de San Luis Potosí, Av. Karakorum No. 1470, Lomas 4a Secc., San Luis Potosí, S.L.P. 78210, México.
M. Lopez-Lopez
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
*
*Email: [email protected]
Get access

Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Keywords

III-VNanostructureoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1534: Symposium 6B – Low-Dimensional Semiconductor Structures , 2013 , pp. A57 - A62
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Hasegawa, H. and Akazawa, M., Appl. Surf. Sci. 255 (2008) 628.CrossRefGoogle Scholar
Oigawa, H., Fan, J., Nannichi, Y., Sugahara, H. and Oshima, M., Jpn. J. Appl. Phys. 30 (1991) L322–L325.CrossRefGoogle Scholar
Khabibullin, R. A., Vasil’evskii, I. S., Gabliev, G. B., Klimov, E. A., Ponomarev, D. S., Gladkov, V. P., Kulbachinskii, V. A., Klochkov, A. N., and Uzeeva, N. A., Semiconductors 45 (2011) 657.CrossRefGoogle Scholar
Kopnov, G., Umansky, V. Y., Cohen, H., Shahar, D., and Naaman, R., Phys. Rev. B 81 (2010) 045316.CrossRefGoogle Scholar
Cerskus, A., Kundrotas, J., Nargeliene, V., Suziedelis, A., Asmontas, S., Gradauskas, J., Johannessen, A., and Johannessen, E., Lithuanian Journal of Physics Vol. 51, 4, (2011) 330.CrossRefGoogle Scholar
Pan, N., Zheng, X. L., Hendriks, H., and Carter, J., J. Appl. Phys. 68 (1990) 2355.CrossRefGoogle Scholar
Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R. and Saitoz, M., Semicond. Sci. Technol. 13 (1998) 1418.CrossRefGoogle Scholar
Sydor, M., Jahren, N., Mitchel, W.C., Lampert, W.V., Haas, T.W., Yen, M.Y., Mudare, S.M., Tomich, D.H., J. Appl. Phys. 67 (1990) 7423.CrossRefGoogle Scholar
Zamora-Peredo, L., López-López, M., Lastras-Martínez, A., Méndez-García, V. H., Journal of Crystal Growth 278 (2005) 591.CrossRefGoogle Scholar
Misiewicz, J., Sitarek, P., Sek, G., Kudrawiec, R., Materials Science, Vol. 21, No. 3, (2003) 263.Google Scholar
Zamora-Peredo, L., Cortes-Mestizo, I. E., Garcia-Gonzalez, L., Hernandez-Torres, J., Vázquez-Cortés, D., Shimomura, S., Cisneros-de la Rosa, A., and Méndez-García, V. H., Journal of Crystal Growth, in press.Google Scholar
Shen, H. and Pollak, F. H., Phys. Rev. B 42, (1990) 7097.CrossRefGoogle Scholar
JayantBaliga, B., Fundamentals of Power Semiconductor Devices, Springer, USA, 2008, pp. 306.Google Scholar