Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T07:23:21.279Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect Of The Nucleation Layer On The Low Temperature Growth Of Gan Using A Remote Plasma Enhanced – Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)

Published online by Cambridge University Press:  10 February 2011

Kyoung-Kook Kim ,
Dong-Jun Kim ,
Jong-Sik Paek ,
Je-Hee Jo ,
Hyo-Gun Kim ,
Tae-Yeon Seong  and
Seong-Ju Park
Kyoung-Kook Kim
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506–712, Korea
Dong-Jun Kim
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506–712, Korea
Jong-Sik Paek
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506–712, Korea
Je-Hee Jo
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506–712, Korea
Hyo-Gun Kim
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506–712, Korea
Tae-Yeon Seong
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506–712, Korea
Seong-Ju Park
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506–712, Korea
Get access

Abstract

This study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma cell for a nitrogen source. It was found that the growth temperature and the film thickness of the nucleation layer and the nitrogen flow rate for GaN growth play important roles in the improvement of crystallinity of the GaN layer. The nitridation of sapphire was also found to enhance the formation of facet shaped nuclei on the nucleation layer. As the temperature of the nucleation layer increased, islands with hexagonal and other facet shapes were formed on the grown GaN surface. This facet formation was related with the surface morphology and crystallinity of GaN. The best crystallinity was measured in a GaN layer with hexagonal facets on the surface and such GaN layers could be grown on a nucleation layer grown at 375 °C. Nitridation of sapphire and the growth temperature of the nucleation layer were also found to change the island shapes which enhances the formation of columnar structures in the GaN layer, resulting in the growth of a high crystalline GaN layer at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 75
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Senoh, M., Muki, T., Appl. Phys. Lett. 62, 2390 (1993).Google Scholar
2. Stevens, K. S., Kinniburgh, M., Beresford, R., Appl. Phys. Lett. 66, 3518 (1995).Google Scholar
3. Detchprohm, T., Amano, H., Hiramatsu, K., Akasaki, I., J. Crystal Growth 128, 384 (1993)Google Scholar
4. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Crystal Growth 98, 209 (1989).10.1016/0022-0248(89)90200-5Google Scholar
5. Nakamura, S., J. Crystal Growth 145, 911 (1994).Google Scholar
6. Nuese, C. J. and Pankove, J. I., Topic in Appl. Phys. 40, Springer-Verlag, New York 35 (1980).Google Scholar
7. Sitar, Z., Smith, L. L., Davis, R. F., J. Cryst. Growth. 141, 11 (1994).10.1016/0022-0248(94)90086-8Google Scholar
8. Moustakas, T. D., Lei, T. and Molnar, R. J., Physica B 185, 36 (1993).10.1016/0921-4526(93)90213-PGoogle Scholar
9. Lin, M. E., Sverdlov, B. N., Morkoc, H., J. Appl. Phys. 74, 5038 (1993).10.1063/1.354285Google Scholar
10. Kuwano, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., and Oki, K., J. Crystal Growth, 115, 628 (1991).10.1016/0022-0248(91)90772-WGoogle Scholar
11. Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T., Minagawa, S., J. Appl. Phys. 79, 3487 (1996).Google Scholar
12. Ponce, F. A., Bour, D. P., and Gotz, W. Appl. Phys. Lett. 68, 57 (1996).10.1063/1.116756Google Scholar