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Effect of the End of Range Loop Layer Depth on the Evolution of {311} Defects.

Published online by Cambridge University Press:  10 February 2011

R. Raman ,
M. E. Law ,
V. Krishnamoorthy  and
K. S. Jones
R. Raman
Affiliation:
SWAMP Center, Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611-6130, [email protected]
M. E. Law
Affiliation:
SWAMP Center, Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611-6130, [email protected]
V. Krishnamoorthy
Affiliation:
SWAMP Center, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6130
K. S. Jones
Affiliation:
SWAMP Center, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6130
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Abstract

The interactions between end of range dislocation loops and {311} defects as a function of their proximity was studied. The dislocation loops were introduced at 2600 Å by a dual 1 × 1015 cm−2, 30 keV and a 1 × 1015 cm−2 , 120 keV Si+ implantation into Silicon followed by a anneal at 850 °C for 30 minutes. The depth of the loop layer from the surface was varied from 2600 Å to 1800 Å and 1000 Å by polishing off the Si surface using a chemical-mechanical polishing (CMP) technique. A post-CMP 1 × 1014 cm−2, 40 keV Si+ implantation was used to create point defects at the projected range of 580 Å. The wafers were annealed at 700, 800 and 900 °C and plan-view transmission electron microscopy (TEM) study was performed. It was found that the number of interstitials in {311} defects decreased as the projected range damage was brought closer to the loop layer, while the number of rectangular elongated defects (REDs) increased. Experimental investigation showed that REDs are formed at the end-of-range. It is concluded that the interstitials introduced at the projected range are trapped at the end-of-range dislocations. The REDs are formed due to the interactions between the interstitials and the pre-existing loops.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 61
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 1997.Google Scholar
2. Fahey, P. M., Griffin, P. B., and Plummer, J. D., Rev. Mod. Phys. 61, 289 (1989).Google Scholar
3. Jones, K. S., Liu, J., Zhang, L., Krishnamoorthy, V., and DeHoff, R. T., Nucl. Intsrum. Methods Phys. Res. B, 106, 227 (1995).Google Scholar
4. Eaglesham, D. J., Stolk, P. A., Gossman, H.-J., and Poate, J. M., Appl. Phys. Lett. 65, 2305 (1994).Google Scholar
5. Jones, K. S., Prussin, S., and Weber, E. R., Appl. Phys. A, 45, 1 (1988).Google Scholar
6. Claverie, A., Laanad, L., Bonafos, C., Bergaud, C., Martinez, A., and Mathiot, D., Nucl. Inst. Meth. B, 96, 202, 1995.Google Scholar
7. Listerbarger, J. K., Jones, K. S., and Slinkman, J. A., J. Appl. Phys., 73, 10, (1993).Google Scholar
8. Jones, K. S., Robinson, H. G., Listerbarger, J., Chen, J., Nucl. Inst. Methods Phys. Res. B, 96, 196, (1995).Google Scholar
9. Hemer, S. B., Krishnamoorthy, V., Jones, K. S., Mogi, T. K., Thompson, M. O., and Gossman, H.-J., J. Appl. Phys, 81, 11, (1997).Google Scholar
10. Hemer, S. B., Gila, B. P., and Jones, K. S., J. Vac. Sci. Tech. B, 14, 6, (1996)Google Scholar
11. Bharatan, S., Desroches, J., and Jones, K. S., Materials and Process Characterization of Ion Implantation -A Review of Methods, Ion Beams Press, Austin, 1997.Google Scholar