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Effect of Superlattice Doped Layers on the Performance of a-Si:H P-I-N Solar Cells

Published online by Cambridge University Press:  28 February 2011

Rajeewa R. Arya ,
Anthony Catalano  and
James O'dowd
Rajeewa R. Arya
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
Anthony Catalano
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
James O'dowd
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
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Abstract

Superlattice doped layers of the type ABABAB … have been prepared where A is the wide bandgap a-Si:C:H doped layer and B is the narrow bandgap a-Si:C:H or a-Si:H doped layer. The bandgaps of the individual layers were modulated by changing the gas phase composition of methane during the plasma deposition. By varying the structure of the films, superlattice p-layers with resistivities in the range of 106 - 107 ohm-cm with optical bandgaps of 2.0 - 2.4 eV, and activation energies of 0.35 - 0.48 eV and superlattice n-layers with resistivities in the range of 104 - 105 ohm-cm with optical bandgaps of 1.86 - 2.03 eV and activation energies of 0.38 - 0.47 eV have been obtained.

P-I-N solar cells have been prepared with both p and n layers comprised of superlattice structures. Conversion efficiencies as high as 10.86% have been achieved under simulated AM1.5 Global conditions. Measurements reveal a marked improvement in both built-in voltage and carrier collection length.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 517
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Carlson, D.E. and Wronski, C.R., Appl. Phys. Lett. 28, 671 (1976).CrossRefGoogle Scholar
2. Tawada, Y., Kondo, M., Okamata, H. and Hamakawa, Y., Sol.Ener. Mat. 6, 299 (1982).Google Scholar
3. Catalano, A., D'Aiello, R.V., et al., Proc. 16th IEEE PVSC, 1421 (1982).Google Scholar
4. Lim, K.S., Konagai, M. and Takahashi, K., J. Appl. Phys. 56, 538 (1984).CrossRefGoogle Scholar
5. Hamasaki, T., Kurata, H., Hirose, M. and Osaka, Y., Appl. Phys. Lett. 37, 1084 (1984).Google Scholar
6. Cody, G.D., Tiedje, T., Abeles, B., Brooks, B. and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1981).Google Scholar
7. Yamasaki, S., Mase, A., et al., Elect. Dev. Lett. 5, 315 (1984).CrossRefGoogle Scholar
8. Ksakai, H., Ichikawa, Y., Ichimura, T., Saitoh, S. and Uchida, Y., Proc. 6th European PVSEC, 682 (1985).Google Scholar
9. Ohnishi, M., Kishi, Y. et al., Proc. 6th European PVSEC, 677 (1985).Google Scholar
10. Sakai, H., Maruyama, K., Yoshida, T., Ichikawa, Y., Hana, T., Ueno, M., Kamiyama, M. and Uchida, Y., Proc. ist Inter. PVSEC, 591 (1984).Google Scholar
11. Tiedje, T. and Abeles, B., Appl. Phys. Lett. 45(2), 179 (1984).Google Scholar
12. Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).CrossRefGoogle Scholar
13. Tiedje, T., Abeles, B., Persans, P.D., Brooks, B.G. and Cody, G.D., J. Non- Cryst. Sol. 66, 345 (1984).Google Scholar
14. Kakalions, J., Fritzsche, H. and Ibaraki, N., J. Non-Cryst. Sol. 66, 327 (1984).Google Scholar
15. Hirose, M. and Miyazaki, S., J. Non-Cryst. Sold. 66, 327 (1984).Google Scholar
16. Chen, I., Phys. Rev. B. 32(2), 879 (1985).Google Scholar
17. Chen, I., Phys. Rev. B. 32(2), 885 (1985).CrossRefGoogle Scholar
18. Arya, R.R., Catalano, A., O'Dowd, J., Morris, J. and Wood, G., Proc. 18th IEEE PVSC, Las Vegas (1985).Google Scholar
19. Tsuda, S., Nakano, S., Tarui, H., Takahama, T., Haku, H., Watanabe, K., Nishikuni, M. and Kuwano, Y., Proc. 18th IEEE PVSEC, Las Vegas (1985).Google Scholar
20. Hirose, M., Miyazaki, S. and Murayama, N., presented at Joint Tech. Workshop, EPRI, Carmel, CA 1985 (unpublished).Google Scholar
21. Rothwarf, A., Proc. 15th IEE PVSC, 690 (1981).Google Scholar