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Effect of Substrate Heating During Excimer Laser Annealing on Poly-Si TFT
Published online by Cambridge University Press: 15 February 2011
Abstract
Single-shot ELA was performed on 45nm-thick amorphous Si films. With an increase in pulse energy density, the cystallinity improved drastically for both samples without heating and with heating at 400°C. Correspondingly, the characteristics of TFT fabricated using a low temperature process improved distinctly. The threshold voltage decreased depending on the decrease in gate voltage swing due to the improvement in crystallinity of Si films. Efficient single-pulse ELA of less than 250MJ/cm2 as the optimum condition for poly Si TFT has been attained as a result of saving an energy amount of 100mJ/cm2 by heating the substrate. Moreover, a uniform distribution of TFT characteristics across the wafer was obtained.
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- Copyright © Materials Research Society 1996
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