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Effect of Strain on the Tunability of Highly (100) Oriented Mn-doped Barium Strontium Stannate Titanate Thin Films

Published online by Cambridge University Press:  01 February 2011

Shengbo Lu ,
Ngai Wing Li  and
Zhengkui Xu
Shengbo Lu
Affiliation:
[email protected], City University of Hong Kong, Department of Physics and Materials Science, 83 Tat Chee Avenue, Kowloon, Hong Kong, N/A, China, People's Republic of
Ngai Wing Li
Affiliation:
[email protected], Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, N/A, China, People's Republic of
Zhengkui Xu
Affiliation:
[email protected], Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, N/A, China, People's Republic of
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Abstract

Highly (100)-oriented Mn-doped barium strontium stannate titanate thin films of a nominal composition (Ba0.7Sr0.3)(Sn0.2Ti0.8-xMnx)O3 (Mn-BSSnT) (x=0%, 0.2%, 0.4%, 0.6% and 1%), were fabricated by pulsed laser deposition on (La0.7Sr0.3)O3/LaAlO3 substrates. Both elastic strain and inhomogeneous strain were measured by x-ray diffraction techniques. Relationship between the strain and the dielectric properties of the Mn-BSSnT thin films were systematically investigated as a function of the Mn content. Our results show that the tunability is dependent upon not only the elastic strain induced by thermal expansion coefficient and lattice mismatch between the thin film and the substrate but also inhomogeneous strain induced by Mn doping. The tunability decreases with increasing inhomogeneous strain and can be easily manipulated by changing Mn doping content, which is beneficial to real tunable device applications.

Keywords

stress/strain relationshipdielectric propertiesx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-11
Copyright
Copyright © Materials Research Society 2008

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References

[1] Setter, N. and Waser, R., Acta Mater. 48, 151 (2000).Google Scholar
[2] Swardz, S.L., IEEE Trans. Electr, Insul. 25, 935 (1990).Google Scholar
[3] Tagantsev, A.K.. Sherman, V.O., Astafiev, K.F., Venkatesh, J., and Setter, N., J. Electroceram. 11, 5 (2003).Google Scholar
[4] Ho, K., Baik, S., and Kim, S.S., J. Appl. Physi. 92, 2651 (2002).Google Scholar
[5] Joshi, P.C. and Cole, M.W., Appl. Phys. Lett. 77, 289 (2000).Google Scholar
[6] Lu, S.G. and Xu, Z.K., Appl. Phys. Lett. 89, 152907 (2006).Google Scholar
[7] Lu, S.G., Xu, Z.K. and Chen, Haydn, Appl. Phys. Lett. 85, 5319 (2004).Google Scholar
[8] Meda, L., Dahmen, K.H., Hayek, S., Garmestani, H., J. Crystal. Growth, 263, 185 (2004).Google Scholar
[9] Williamson, G. K, Hall, W. H, Acta Metall. 1 (1953) 22.Google Scholar
[10] Noyan, I. C, Cohen, J. B, Residual Stress: Measurement by Diffraction and Interpretation, Springer, New York, 1987.Google Scholar
[11] Moulson, A.J. and Herbert, J.M., Electroceramics: Materials, Properties, and Applications, 2nd ed. (John Wiley & Sons Ltd., Hoboken, 2003).Google Scholar
[12] Navi, N., Horwitz, J.S., Wu, H.-Du, and Quadri, S.B., Mater. Res. Soc. Symp. Proc. 720, 41(2002).Google Scholar
[13] Balzar, D., Ramakrishnan, P.A. and Hermann, A.M., Phys.Rev.B 70, 092103 (2004).Google Scholar
[14] Catalan, G., Noheda, B., McAneney, J., Sinnamon, L. J., and Gregg, J. M, Phys. Rev. B 72, 020102(R) (2005)Google Scholar