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Effect of Strain and Interface Interdiffusion on the Valence Band Offset at Si/Ge Interfaces

Published online by Cambridge University Press:  25 February 2011

Mark S. Hybertsen
Mark S. Hybertsen*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ, 07974
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Abstract

The valence band offset for the Si/Ge interface is studied using the local density functional approach with a superlattice geometry. The effect of non-abrupt interfaces is modeled by including an interface layer of Si5 Ge0 5 ordered in a interface unit cell. The change in valence band offset is less than 0.01 eV. For an abrupt interface, the offset is found to be a function of strain in the Ge. The interface dipole is proportional to the perpendicular strain parameter which yields an interface contribution to the energy of the strained epitaxial Ge layers. The equilibrium strain parameter in epitaxial Ge differs from that in biaxially compressed bulk Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 329
Copyright
Copyright © Materials Research Society 1989

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References

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