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The Effect of Starting Silicon Crystal Structure on Photoluminescence Intensity of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

W. B. Dubbelday ,
S. D. Russell  and
K. L. Kavanagh
W. B. Dubbelday
Affiliation:
Naval Command, Control, and Ocean Surveillance Center, RDT&E Division (NRaD), Code 553, San Diego, CA 92152-7633 Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
S. D. Russell
Affiliation:
Naval Command, Control, and Ocean Surveillance Center, RDT&E Division (NRaD), Code 553, San Diego, CA 92152-7633
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
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Abstract

In previous work we reported that porous silicon (PS) films formed using a dilute HF:HNO3 chemical etch on polycrystalline, implant damaged single crystal, or amorphous starting material have luminescent characteristics that differ from PS fabricated on single crystal silicon1. Polycrystalline and implant damaged porous silicon exhibits brighter luminescence compared to single crystal silicon etched under identical conditions. No photoluminescence is detected from the porous amorphous silicon. In this work these effects are examined using HF:NaNO2 solutions with freely available NO2. The accelerated etching effects from work damage are reduced, and the PS from polycrystalline and implant damaged silicon luminesce with the same intensity as the PS from single crystal silicon. Again, etched amorphous silicon does not luminesce. TEM and EDX porosity measurements are used to determine the differences in structure and etching characteristics between the luminescent and non-luminescent materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 351
Copyright
Copyright © Materials Research Society 1995

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References

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