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The Effect of Si ON TiAl3 Formation EV Ti/Al Alloy Bilayers

Published online by Cambridge University Press:  21 February 2011

Paul R. Besser ,
John E. Sanchez Jr  and
Roger Alvis
Paul R. Besser
Affiliation:
Advanced Micro Devices, Integrated Technology Division, One AMD Place, Sunnyvale, CA
John E. Sanchez Jr
Affiliation:
Advanced Micro Devices, Integrated Technology Division, One AMD Place, Sunnyvale, CA
Roger Alvis
Affiliation:
Advanced Micro Devices, Integrated Technology Division, One AMD Place, Sunnyvale, CA
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Abstract

Metallization lines in advanced integrated circuits are often fabricated from sputter-deposited Ti/Al layers. It is well known that the Ti/Al react above ∼350°C to form T1AI3 with a rate that is dependent on anneal temperature and the alloying content of Cu and Si in the Al. In the present work, the thickness of TiAl3 formed during annealing at 430°C has been determined from the measurement of the sheet resistance of Ti/Al-.5%Cu and Ti/Al-.5%Cu-l%Si bilayers. Analyses of the reacted structures were performed by cross-section transmission electron microscopy and Auger depth profiling. We find that the Si exhibits a greater retardation effect on the Ti/Al reaction than does Cu, as shown previously. Kinetic analysis for the Ti/AlCuSi reaction shows that the TiAl3 formation rate is a function of the Ti/AlCuSi thickness ratio. We propose that this effect is due to several mechanisms which involve diffusion and incorporation of Si into the growing TiAl3layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 631
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Tracy, D.P., Knorr, D.B., and Rodbell, K.P., J. Appl. Phys. 76(5), 2671 (1994).Google Scholar
2. Colgan, E.G., Mat. Sci. Rep. 5, 3 (1990).Google Scholar
3. Tardy, J. and Tu, K.N., Phys. Rev. B 32(4), 2070 (1985).Google Scholar
4. Wittmer, M., LeGoues, F., and Huang, H.-C.W., J. Electrochem. Soc. 132, 1450 (1985).Google Scholar
5. Nahar, R.K. and Devashrayee, N.M., Applied Physics Letters 50, 130 (1987).Google Scholar
6. Nahar, R.K., Devashrayee, N.M., and Khokle, W.S., J. Vac. Sci. Technol. B 6(3), 880 (1988).Google Scholar
7. Slusser, G.J., Ryan, J.G., Shore, S.E., Lavoie, M.A., and Sullivan, T.D., J. Vac. Sci. Technol. A 7(3), 1568 (1989).Google Scholar
8. Knorr, D.B., Rensselaer Polytechnic Institute, Private Communication.Google Scholar
9. Shen, B. W. et al, Proceedings Materials Research Society, Vol. 54, 103, 1986.Google Scholar