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Effect of Si and Ge Interface Layers on the Schottky Barrier Height of Metal Contacts to GaAs

Published online by Cambridge University Press:  25 February 2011

J.R. Waldrop  and
R.W. Grant
J.R. Waldrop
Affiliation:
Rockwell International Science Center, Thousand Oaks, CA 91360
R.W. Grant
Affiliation:
Rockwell International Science Center, Thousand Oaks, CA 91360
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Abstract

A new approach for extending the range of the Schottky barrier height ϕB of metal contacts to (100) GaAs is described. Very thin (∼ 10-30Å) heavily n-type and p-type Si or Ge interlayers are found to directly alter the GaAi interface Fermi energy EF. X-ray photoemission spectroscopy is used to determine EF during contact formation and the corresponding ϕB for thick contacts is measured by electrical methods. In an appropriate structure the ϕB range for contacts to n-type GaAs is ∼ 0.25 to 1.0 eV. For p-type GaAs ϕB has been increased to as much as 0.9 eV. This method of ϕBcontrol can be used for both Schottky barrier contact and nonalloyed ohmic contact applications. The results are interpreted in terms of a simple heterojunction model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 125
Copyright
Copyright © Materials Research Society 1989

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