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Effect of Residual Stress on Si-Consumption During W-Deposition by LPCVD

Published online by Cambridge University Press:  25 February 2011

S. H. Lee ,
J. J. Lee  and
Dong-Wha Kum
S. H. Lee
Affiliation:
Seoul National University, Dept. of Metallurgical Engineering, 56–1 San, Kwanakgu, Seoul 151–742, Korea
J. J. Lee
Affiliation:
Seoul National University, Dept. of Metallurgical Engineering, 56–1 San, Kwanakgu, Seoul 151–742, Korea
Dong-Wha Kum
Affiliation:
Korea Institute of Science and Technology, Division of Metals, P.O.Box 131, Cheongryang, Seoul, Korea
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Abstract

The effect of stress on W-deposition at low pressure by Si-reduction of WF6 has been studied on patterned wafers utilizing cross-section SEM and cross-section TEM. Si-consumption and encroachment formation at the Si/Si02 interface was analyzed as a function of the oxide thickness, which changes the residual stress of the Si-substrate beneath the SiO2-layer. At the edge of the SiO2-layer, significant enhancement of W-deposition was observed from the early stage of W-metallization. Penetration of W into the Si-substrate beneath the edge showed strong dependency upon the oxide thickness, while penetration along the SiO2/Si interface (i.e. encroachment) did not. It has been analyzed that early stage of W-deposition was strongly affected by residual stress in the Si-substrate, and contact between WF6 and Si will be much easier through porous W-film and the W/Si interface, where the existence of microvoids is expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 609
Copyright
Copyright © Materials Research Society 1990

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References

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