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Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

Published online by Cambridge University Press:  10 February 2011

Jianguo Zhu ,
Meng Chen ,
Wenbing Peng ,
Fahua Lan ,
E.V. Sviridov  and
Dingquan Iao
Jianguo Zhu
Affiliation:
Department of Materials Science, Sichuan University, Chengdu, 610064, P.R.China
Meng Chen
Affiliation:
Department of Materials Science, Sichuan University, Chengdu, 610064, P.R.China
Wenbing Peng
Affiliation:
Department of Materials Science, Sichuan University, Chengdu, 610064, P.R.China
Fahua Lan
Affiliation:
Department of Materials Science, Sichuan University, Chengdu, 610064, P.R.China
E.V. Sviridov
Affiliation:
Department of Materials Science, Sichuan University, Chengdu, 610064, P.R.China
Dingquan Iao
Affiliation:
Department of Materials Science, Sichuan University, Chengdu, 610064, P.R.China
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Abstract

The fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 419
Copyright
Copyright © Materials Research Society 1996

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References

1. Carrno, J., Sudhama, C., Lee, J., Tasch, A., and Miller, W., Proc. of 1989 International Electron Device Meeting, Washington, D.C. IEDM, 1989, 89–255 Google Scholar
2. Sheppard, L.M., Ceram.Bull., 71, 85 (1992)Google Scholar
3. Sreenivas, K., Sayer, M., Barr, D.J. and Nishioka, M., Appl.Phys.Lett., 52, 709 (1988)Google Scholar
4. Scott, J.F., Araujo, C.A. Paz de, and McMillan, L.D., Condensed Matter News, 1, 16 (1992)Google Scholar
5. Xiao, D.Q. and Yao, X., Ferroelectrics, 108, 53 (1990)Google Scholar
6. Guo, H.C., Xiao, D.Q., Xiao, Z.L., Xie, B.Z., Shao, Q.W. and Zhu, J.M., Ferroelectrics, 108, 59 (1990)Google Scholar
7. Xiao, D.Q., Xiao, Z.L., Zhu, J.M., Wan, D.R., Guo, H.C., Xie, B.Z. and Yan, H., Appl. Phys. Lett., 58, 36 (1991)Google Scholar
8. Xiao, D.Q., Zhu, J.M., Zhu, J.G., Xiao, Z.L., Qian, Z.H., Zhang, H.L., Guo, H.C., and Xle, B.Z., Ferroelectrics, 141, 327 (1993)Google Scholar
9. Qian, Z.H., Xiao, D.Q., Zhu, J.G. and Zuo, C.M., J.Appl.Phys., 74, 224 (1993)Google Scholar
10. Fox, G.R., Krupanichi, S.B., and More, K.L., J.Mater. Res., 7, 3039 (1992)Google Scholar
11. Chen, S.Y. and Chen, I.W., J.Am.Ceram.Soc., 77, 2332 (1994)Google Scholar
12. Tuttle, B.A., Headley, T.J., Bunker, B.C., Schwartz, R.W., Zender, T.J., Hernandez, C.L., Goodnow, D.C., Tissot, R.J., Michael, J., and Carim, A.H., J.Mater.Res., 7, 1876 (1992)Google Scholar