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Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System

Published online by Cambridge University Press:  15 February 2011

X. Sun ,
M. S. Dresselhaus ,
K. L. Wang  and
M. O. Tanner
X. Sun
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
M. S. Dresselhaus
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
K. L. Wang
Affiliation:
Department of Electrical Engineering, University of California, Los Angeles, CA 90024
M. O. Tanner
Affiliation:
Department of Electrical Engineering, University of California, Los Angeles, CA 90024
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Abstract

The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 261
Copyright
Copyright © Materials Research Society 1997

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References

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