Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-05T14:18:30.259Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Processing Conditions on Electrical and Magnetic Properties of Pb(Zr, Ti)O3 CoFe2O4 Multilayers Thin Films

Published online by Cambridge University Press:  15 March 2011

Nora Patricia Ortega ,
P. Bhattacharya ,
Ram S Katiyar ,
S B Majumder ,
I Takeuchi ,
P. Dutta ,
M S Sheehra  and
Ashok Kumar
Nora Patricia Ortega
Affiliation:
Department of Physics, University of Puerto Rico, PO Box 23343, San Juan, 00931-3343, Puerto Rico
P. Bhattacharya
Affiliation:
Department of Physics, Fisk University, Nashville, TN, 37208
Ram S Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, PO Box 23343, San Juan, 00931-3343, Puerto Rico
S B Majumder
Affiliation:
Materials Science Center, Indian Institute of Technology, Kharagpur, 721302, India
I Takeuchi
Affiliation:
Department of Materials, University of Maryland, College Park, MD, 20742
P. Dutta
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV, 26506
M S Sheehra
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV, 26506
Ashok Kumar
Affiliation:
Department of Physics, University of Puerto Rico, PO Box 23343, San Juan, 00931-3343, Puerto Rico
Get access

Extract

The multilayers of ferroelectric (FE) Pb(Zr, Ti)O3 (PZT) and ferromagnetic (FM) CoFe2O4 (CFO) thin films with 3, 5, and 9 layers having configurations PZT/CFO (PC) and CFO/PZT (CP) were fabricated by pulsed laser deposition technique. We have investigated the effect of inter-diffusion at the interface of multilayers (MLs) and reversing the order of FE and FM layers in the multilayers configuration on the electrical/magnetic properties. The TEM of the films showed that the layer structure was not maintained and the inter-diffusion of the CFO into PZT and vice verse were observed at the interface of MLs. Both the PC and CP configurations of multilayer films exhibited pseudo FE hysteresis loop and proper FM hysteresis loops at room temperature. Reversing the multilayer configuration from CP to PC resulted in increasing the pseudo remanent polarization, however this behavior was not observed in magnetic properties. The frequency and temperature dependences of the impedance and modulus spectroscopy of the multilayer PC and CP films were studied in the ranges of 102 to 106 Hz and 200 to 650 K respectively. The electrical response of all multilayer films investigated could be resolved into two contributions. We attributed these to the grain and grain boundary effects in impedance and modulus formalism. We found that the difference between the grain and grain boundary capacitive effect decreased due to increase of the number of layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1000: Symposium L – Functional Interfaces in Oxides , 2007 , 1000-L06-23
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Spaldin, N.A. and Fiebig, M., Science 309, 391 (2005).Google Scholar
2 Chang, K.S., Aronova, M.A., Lin, C.L., Murakami, M., Yu, M.H., Simpers, J. H., Famodu, O.O., Lee, S.Y., Ramesh, R., Wuttig, M., Takeuchi, I., Gao, C., Bendersky, L.A.. Appl. Phys. Lett. 84, 3091 (2004).Google Scholar
3. Zhou, J.P., He, H., Shi, Z., and Nan, C.W., Appl. Phys. Lett. 88, 013111 (2006).Google Scholar
4. Murugavel, P., Singh, M.P., Prellier, W., Mercey, B., Simon, Ch., and Raveau, B., J. Appl. Phys. 97, 103914 (2005).Google Scholar
5. Zheng, H., Wang, J., Lofland, S.E., Ma, Z., Ardabili, L. M., Zhao, T., Riba, L. S., Shinde, S.R., Ogale, S.B., Bai, F., Viehland, D., Jia, Y., Schlom, D.G., Wuttig, M., Roytburd, A., and Ramesh, R., Science 303 661 (2004).Google Scholar
6. Ortega, N., Bhattacharya, P., and Katiyar, R. S., Dutta, P., Manivannan, A., and Seehra, M. S., Takeuchi, I. and Majumder, S. B.. J. Appl. Phys. 100, 126105 (2006).Google Scholar
7. Ortega, N., Kumar, Ashok, Katiyar, R. S., and. Scott, J.F... Appl. Phys. Lett. 91, 102902 (2007)Google Scholar
8. Lines, M.E. and Glass, A.M., Principles and Applications of Ferroelectrics and Related Materials (Oxford University Press, New York, 1977).Google Scholar
9. Liu, Jianjun, Duan, Chun-Guan, Mei, W.N., Smith, R.W. and Hardy, J.R.. J. Appl. Phys. 98, 093703 (2005).Google Scholar
10. Liu, Jianjun, Duan, Chun-Guan, Yin, Wei Guo, Mei, W.N., Smith, R.W. and Hardy, J.R.. Phys. Rew. B. 70144106 (2004).Google Scholar
11. Victor, P., Bhattacharyya, S. and Krupanidhy, S.B.. J. Appl. Phys. 94, 5135 (2003).Google Scholar