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Effect of pressure-enhanced single step annealing on the silicon photoluminescence

Published online by Cambridge University Press:  11 February 2011

S. Binetti ,
A. Le Donne ,
V.V. Emtsev Jr ,
V.V Emtsev  and
S. Pizzini
S. Binetti
Affiliation:
INFM and Department of Material Science, University of Milano-Bicocca, via Cozzi 53 Milano, Italy
A. Le Donne
Affiliation:
INFM and Department of Material Science, University of Milano-Bicocca, via Cozzi 53 Milano, Italy
V.V. Emtsev Jr
Affiliation:
Van der Waals – Zeeman Institute Amsterdam University, Valckenierstraat 65 NL-1018 XE Amsterdam, The Netherlands
V.V Emtsev
Affiliation:
Russian Academy of Sciences, Ioffe Physico-Technical Inst., St Petersburg, RUSSIA
S. Pizzini
Affiliation:
INFM and Department of Material Science, University of Milano-Bicocca, via Cozzi 53 Milano, Italy
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Abstract

The effect of single-step annealing under GPa hydrostatic pressures on the photoluminescence of Cz silicon samples has been investigated at 450, 650 and 1000°C. It has been demonstrated that the effect of applied pressure begins to be detectable at 650°C and significant at 1000°C, where not only the effect of the applied pressure but also that of the dopants was clearly evidenced. In the first case the presence of a gap level associated to self-interstitial clusters could be argued, while in the second case both the oxide segregation and the dislocation formation was shown to be enhanced by the pressure and selectively addressed to the type of doping, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.35
Copyright
Copyright © Materials Research Society 2003

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References

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