Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:23:38.277Z Has data issue: false hasContentIssue false
  • English
  • Français

The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry

Published online by Cambridge University Press:  01 February 2011

Yuichi Yamamoto ,
Takaaki Kozuki ,
Shunichi Shibuki ,
Keiichi Maeda ,
Yasuaki Inoue ,
Shinji Tawara  and
Naoki Toge
Yuichi Yamamoto
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Takaaki Kozuki
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Shunichi Shibuki
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Keiichi Maeda
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Yasuaki Inoue
Affiliation:
Technical Dept., Noritake Super Abrasive LTD., Ukiha-gun, Fukuoka, Japan.
Shinji Tawara
Affiliation:
Technical Dept., Noritake Super Abrasive LTD., Ukiha-gun, Fukuoka, Japan.
Naoki Toge
Affiliation:
Technical Dept., Noritake Super Abrasive LTD., Ukiha-gun, Fukuoka, Japan.
Get access

Abstract

A ceria-based in-situ conditioning process was successfully developed. A new single layered metal bonded conditioner was developed to solve problems encountered in implementing ceria based in-situ conditioning process. The planarity was significantly improved compared with that of conventional Ni-plated in-situ conditioning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W3.5
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kim, H., Jeong, H., Lee, E., and Shin, Y., “Pad Surface Characterization and its Effect on the Tribological State in Chemical Mechanical Polishing,” Key Engineering Materials Vols. 257-258 (2004) pp. 383–388.Google Scholar
2. Castillo-Mejia, D., Gold, S., Burrows, V., and Beaudoin, S., “The Effect of Interactions Between Water and Polishing Pads on Chemical Mechanical Polishing Removal Rates,” Journal of The Electrochemical Society, 150 (2) G76–G82 (2003).Google Scholar
3. Coppeta, J., Rogers, C., Racz, L., Philipossian, A., and Kaufman, F. B., “Investigating Slurry Transport Beneath a Wafer during Chemical Mechanical Polishing Process,” Journal of The Electrochemical Society, 147 (5) 1903–1909 (2000).Google Scholar
4. Achuthan, K., Curry, J., Lacy, M., Campbell, D., and Babu, S. V., “Investigation of Pad Deformation and Conditioning During the CMP of Silicon Dioxide Films” Journal of Electronic Materials, Vol. 25, No. 10, 1996.Google Scholar
5. Tso, P. L. and Ho, S. Y., “A Study on the Dressing Rate in CMP Pad Conditioning,” Key Engineering Materials Vols. 257-258 (2004) pp. 377–380.Google Scholar