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Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  11 February 2011

A. H. Onstine ,
B. P. Gila ,
J. Kim ,
D. Stodilka ,
K. Allums ,
C. R. Abernathy ,
F. Ren  and
S. J. Pearton
A. H. Onstine
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
B. P. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
D. Stodilka
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. Allums
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

The effect of oxygen pressure on MgO grown by RF plasma assisted gas-source molecular beam epitaxy was investigated. Increasing oxygen pressure was found to decrease the growth rate, improve the morphology and reduce the Mg/O ratio to near that obtained from bulk single crystal MgO. By contrast, the electrical characteristics of MgO/GaN diodes showed continual improvement in breakdown field and interface state density as the pressure was decreased. The lowest pressure tested, 1×10−5Torr, produced the lowest Dit, 3×1011 eV−1cm−2, and the highest VBD, 4.4 MV/cm. Cross sectional transmission electron microscopy of the MgO grown at the lowest pressure showed the initial 40 monolayers to be epitaxial, with the remainder of the layer appearing to be fine grained poly-crystal. Comparisons with films grown using an electron cyclotron resonance (ECR) plasma suggest that higher ion energies are desirable for obtaining the best electrical characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.60
Copyright
Copyright © Materials Research Society 2003

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References

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