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The Effect of Oxygen in Cosputtered (Titanium + Silicon) Films

Published online by Cambridge University Press:  15 February 2011

R. Beyers  and
R. Sinclair
R. Beyers
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 and M. E. Thomas, Fairchild Camera and Instrument Corporation, Palo Alto, California 94304
R. Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 and M. E. Thomas, Fairchild Camera and Instrument Corporation, Palo Alto, California 94304
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Abstract

The effect of oxygen incorporation on the growth and microstructure of TiSi2 has been investigated. Cosputtered films, with Si/Ti ratios between one and three, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Both Auger electron spectroscopy, in conjunction with sputter profiling, and Rutherford backscattering spectrometry indicate that oxygen in the as-deposited films redistributes to the silicide-silicon interface upon heating. Cross sectional transmission electron microscope images show that the oxygen is present as an amorphous oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 423
Copyright
Copyright © Materials Research Society 1982

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References

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