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Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films

Published online by Cambridge University Press:  21 May 2013

Teuku M. Roffi ,
Motohiko Nakamura ,
Kazuo Uchida  and
Shinji Nozaki
Teuku M. Roffi
Affiliation:
Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.
Motohiko Nakamura
Affiliation:
Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.
Kazuo Uchida
Affiliation:
Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.
Shinji Nozaki
Affiliation:
Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.
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Abstract

Effect of oxygen to nickel molar ratio (O2/Ni) on the crystallinity of atmospheric pressure metal organic chemical vapor deposition (APMOCVD) grown NiO at 500°C is reported. X-ray diffraction (XRD) analysis including grazing incident angle θ of 0.6°, θ-2θ, ɸ and rocking curve scan are employed for crystallographic characterization. Furthermore, surface roughness is studied by atomic force microscopy (AFM). No evidence of diffraction peaks in X-ray grazing incident angle measurement confirms that all the grown NiO films are well oriented along a certain direction. θ-2θ scan results further indicate that the samples are highly oriented only along [111] direction on (0001) sapphire substrates. The analysis of full width at half maximum (FWHM) of rocking curve scan of (111) plane shows that higher O2/Ni ratio results in better crystallinity. The best crystallinity is achieved with FWHM as low as 0.106° at (111) rocking curve scan corresponding to 82.57nm grain size. AFM measurement shows that NiO films grown with higher O2/Ni ratio have smoother surface morphology.

Keywords

x-ray diffraction (XRD)Nimetalorganic deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1577: Symposium XX – Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies , 2013 , mrss13-1577-xx08-48
Copyright
Copyright © Materials Research Society 2013 

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