Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:32:09.418Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

Published online by Cambridge University Press:  10 February 2011

William Barvosa-Carter  and
Michael J. Aziz
William Barvosa-Carter
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Get access

Abstract

We report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 75
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lu, G.-Q., Nygren, E., and Aziz, M.J., J. Appl. Phys. 70, 5323 (1991).Google Scholar
[2] Aziz, M.J., Sabin, P.C., and Lu, G.-Q., Phys. Rev. B 44, 9812 (1991).Google Scholar
[3] Carter, W. B. and Aziz, M. J., Mater. Res. Soc. Symp. Proc. 356, 87 (1995).Google Scholar
[4] Olson, G.L. and Roth, J.A., Mater. Sci. Rep. 3,1 (1988).Google Scholar
[5] Witvrouw, A. and Spaepen, F., J. Appl. Phys. 74, 7154 (1993).Google Scholar
[6] Aziz, M.J., Mater. Res. Soc. Symp. Proc. 321, 449 (1993).Google Scholar
[7] Zeng, X., Lee, T.-C., Silcox, J., and Thompson, M.O., Mater. Res. Soc. Symp. Proc. 321, 503 (1994).Google Scholar
[8] Asaro, R.J. and Tiller, W.A., Metall. Trans. 3, 1789 (1972); M.A. Grinfeld, Sov. Phys. Dokl. 31, 831 (1986); D.J. Srolovitz, Acta Metall. 37, 621 (1989).Google Scholar
[9] Spaepen, F., Acta Metall. 26, 1167 (1978).Google Scholar
[10] Chiu, C.-H. and Gao, H., Int. J. Solids Struct. 30, 2983 (1993).Google Scholar
[11] Donovan, E. P., Spaepen, F., Turnbull, D., Poate, J.M., and Jacobson, D.C., J. Appl. Phys. 57, 1795 (1985).Google Scholar
[12] Lohmeier, M., DeVries, S., Custer, J.S., Vlieg, E., Finney, M.S., Priolo, F., and Battaglia, A., Appl. Phys. Lett. 64, 1803 (1994)Google Scholar