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The Effect of Multiple Interfaces on the Electrical Properties of MgO/Al2O3 Multilayer Gate Stacks on Si Grown by MBE

Published online by Cambridge University Press:  19 August 2014

Chen-Yi Su ,
Mariela Menghini ,
Jin Won Seo  and
Jean-Pierre Locquet
Chen-Yi Su
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Mariela Menghini
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Jin Won Seo
Affiliation:
Department of Metallurgy and Materials Engineering, KU Leuven, Leuven, Belgium
Jean-Pierre Locquet
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
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Abstract

High-κ and metal gate structures have been used to improve the performance of CMOS devices. By changing the materials and structures of the gate dielectric stacks, the flatband voltage (VFB) and the leakage can be changed. We used bilayers and multilayer structures composed of MgO and Al2O3 to verify their influence on the overall electrical properties. Films with an MgO bottom layer generally are found with less flatband voltage shift and lower leakage than with an Al2O3 bottom layer. Also, the frequency dispersion and the interface state density (Dit) are higher for those with MgO bottom layers. MgO films thicker than 0.5 nm effectively shields the positive charges present in the Al2O3.

Keywords

dielectric propertieselectrical propertiesmolecular beam epitaxy (MBE)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1691: Symposium BB – Materials for End-of-Roadmap Devices in Logic, Power and Memory , 2014 , mrss14-1691-bb09-06
Copyright
Copyright © Materials Research Society 2014 

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References

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