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Effect of Microstructure on the Sheet Resistance of Ion-Beam Deposited ZnO Thin Film

Published online by Cambridge University Press:  25 February 2011

Saliman A. Isa ,
P. K. Ghosh  and
P. G. Kornreich
Saliman A. Isa
Affiliation:
Department of Electrical and Computer Engineering, Syracuse University, Syracuse, New York 13244
P. K. Ghosh
Affiliation:
Department of Electrical and Computer Engineering, Syracuse University, Syracuse, New York 13244
P. G. Kornreich
Affiliation:
Department of Electrical and Computer Engineering, Syracuse University, Syracuse, New York 13244
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Abstract

ZnO thin films were deposited by ion-beam sputtering technique. Preliminary results show that the films are stoichiometric and crystalline in nature. The microstructure of ZnO films obtained depends very much on the process parameters. Among these parameters is the substrate temperature whose effect has been carefully examined.

ZnO films were deposited with substrate temperatures ranging from 200°C to 350°C. We observed that the sheet resistance of the films varies with their microstructure. In this investigation, a sheet resistance of 6.6 Mega-ohms per square is measured on a dense film deposited at a substrate temperature of 325°C.

We present in this paper a correlation between the film's microstructure and stoichiometry with some of it's electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 725
Copyright
Copyright © Materials Research Society 1989

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References

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