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Effect of Microstructure on the Electrical Characteristics of Sol-Gel Derived PZT Thin Films

Published online by Cambridge University Press:  15 February 2011

Jiyoung Kim ,
Rajesh Khamankar ,
Bo Jiang ,
Papu Mamar ,
Reza Moazzami ,
Robert E. Jones  and
Jack C. Lee
Jiyoung Kim
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, TX. 78712
Rajesh Khamankar
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, TX. 78712
Bo Jiang
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, TX. 78712
Papu Mamar
Affiliation:
Materials Research and Strategic Technologies, Motorola, Inc., Austin, TX. 78721
Reza Moazzami
Affiliation:
Materials Research and Strategic Technologies, Motorola, Inc., Austin, TX. 78721
Robert E. Jones
Affiliation:
Materials Research and Strategic Technologies, Motorola, Inc., Austin, TX. 78721
Jack C. Lee
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, TX. 78712
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Abstract

The effects of the microstructure of PZT sol-gel thin films, processed using different solutions, on their material and electrical properties have been studied. The films have different degrees of preferred orientation of the perovskite crystals as well as different grain size. The material characteristics are evaluated using SEM micrographs and XRD. Correlation of these material properties with the electrical properties for both NVRAM and DRAM applications is made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 409
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Scott, J.F. and Paz de Araujo, C.A., Science, 246, 1400 (1989)Google Scholar
2. Miller, W.D., et al., United States Patent #4946710 (1990)Google Scholar
3. Krupanidhi, S. B., et al., J. Appl. Phys. 54(11), 6601 (1993)Google Scholar
4. Etzold, K. F., Roy, R.A. and Saenger, K. L., Mat. Res. Soc. Symp. Proc. 243, 489 (1992)Google Scholar
5. Itoh, H., et al. IEDM Tech. Dig., 831 (1991)Google Scholar
6. Desu, S. B., Peng, C. H., Kammerdiner, L. and Schuele, P.J., Mat. Res. Soc. Symp. Proc., 200, 319 (1990)Google Scholar
7. Paz De Arauzo, C. A., McMillan, L.D. and Scott, J.F., Mat. Res. Soc. Symp. Proc. 230, 277 (1992)Google Scholar