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Effect of Local Atomic Configuration on DX Energy Level

Published online by Cambridge University Press:  25 February 2011

T. Baba ,
M. Mizuta ,
T. Fujisawa ,
J. Yoshino  and
H. Kukimoto
T. Baba
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
M. Mizuta
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
T. Fujisawa
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 227, Japan
J. Yoshino
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 227, Japan
H. Kukimoto
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 227, Japan
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Abstract

The effects of specific local environments on DX centers were investigated for two different substitutional-site-donors of Si and Te in selectively-doped ordered-alloy samples. Capacitance transient technique under hydrostatic pressure was utilized for the determination of the DX energy-level structure. Downward movement of the energy levels for both Si- and Te-DX centers was observed when Al occupies the 2nd or 1st nearest neighbor site, respectively. A very large shift of the electron-emission activation-energy with pressure was found for the Te-DX centers surrounded by specific Al and Ga mixed-environments, whereas negligible shift for the Si-DX centers was observed regardless of the environment. These effects were discussed in relation to the lattice relaxation of the relevant DX centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 741
Copyright
Copyright © Materials Research Society 1990

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References

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