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Effect of Light Intensity on Schottky Barrier Widths and I-V Characteristics of Polymer Heterojunction Photodiodes

Published online by Cambridge University Press:  08 July 2011

Ali Bilge Guvenc ,
Cengiz Ozkan  and
Mihrimah Ozkan
Ali Bilge Guvenc
Affiliation:
Department of Electrical Engineering, University of California Riverside, Riverside, CA 92521, U.S.A.
Cengiz Ozkan
Affiliation:
Department of Mechanical Engineering, University of California Riverside, Riverside, CA 92521, U.S.A. Material Science and Engineering Program, University of California Riverside, Riverside, CA 92521, U.S.A.
Mihrimah Ozkan
Affiliation:
Department of Electrical Engineering, University of California Riverside, Riverside, CA 92521, U.S.A.
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Abstract

The Schottky barriers that forms on the interface between aluminum and organic semiconductor of polymer heterojunction photodiodes based on poly(3-hexylthiophene): [6,6]-phenyl-C61-butyric acid methylester blend, has been investigated according to Mott-Schottky curves. We focused on the effect of light intensity on the Schottky barrier widths and I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different light intensities indicate a dependency of Schottky barrier to the light intensity.

Keywords

thin filmphotovoltaicorganic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1359: Symposium NN – Electronic Organic and Inorganic Hybrid Nanomaterials—Synthesis, Device Physics and Their Applications , 2011 , mrss11-1359-nn05-08
Copyright
Copyright © Materials Research Society 2011

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