Hostname: page-component-669899f699-g7b4s Total loading time: 0 Render date: 2025-04-29T04:02:37.199Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of La Dopant on Electrical Properties of Pb(Zr,Ti)O3 Thin Film Capacitors

Published online by Cambridge University Press:  10 February 2011

Chang Jung Kim  and
Ilsub Chung
Chang Jung Kim
Affiliation:
Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 11, Suwon, Korea 440–600
Ilsub Chung
Affiliation:
Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 11, Suwon, Korea 440–600
Get access

Abstract

Lanthanum doped lead zirconate titanate (PZT) thin films have been prepared on Pt/IrO2/Ir/SiO2/Si substrates to improve the ferroelectric and retention properties. The microstructure and electrical properties of the PZT capacitors were evaluated as a function of La content. The crystalline orientation was appreciably influenced by the addition of La in PZT thin films. The microstructures of films containing 0 and 0.5 mol% La were single phase perovskite, but for La = 1 mol%, a second phase was detected by SEM observation. The 0.5 mol% La doped PZT thin film capacitor showed the best ferroelectric and retention properties for ferroelectric random access memory compared to non-doped PZT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 211
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Chung, I., Lee, J. K. and Yoo, I. K., Integrated Ferroelectrics 10, 99 (1995).Google Scholar
2. Gifford, K. D., Auciello, O., and Kingon, A. I., Integrated Ferroelectrics 7, 195 (1995).Google Scholar
3. Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Jpn. J. Appl. Phys. 33, 5207 (1994).Google Scholar
4. Haertling, G. H. and Land, C. E., J Am. Ceram. Soc. 54,1 (1971).Google Scholar
5. Moazzami, R., Hu, C. and Shepherd, W. H., IEEE Trans. Electron Devices 39, 2044 (1992).Google Scholar
6. Nakashima, H., Hazumi, S., Kamiya, T., Tominaga, K. and Okada, M., Jpn. J Appl. Phys. 33, 5193 (1994).Google Scholar
7. Doi, H. and Atsuki, T., Jpn. J Appl. Phys. 34, 5105 (1995).Google Scholar
8. Kim, S. H., Kim, D. J., Hong, J. G., Streiffer, S. K., and Kingon, A. I., J Mater Res., 14,1371 (1999).Google Scholar