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Effect of Ion Irradiation on the Formation of Ni, Cr and Pt Silicide

Published online by Cambridge University Press:  15 February 2011

Leszek S. Wielunski ,
Chuen-Der Lien ,
Bai-Xin Liu  and
Marc-A. Nicolet
Leszek S. Wielunski
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
Chuen-Der Lien
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
Bai-Xin Liu
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
Marc-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
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Abstract

The influence of Xe+, As+ and Si+ irradiation on the Ni, Cr and Pt-silicide formed upon subsequent thermal annealings has been investigated. Helium MeV backscattering spectrometry and x-ray diffraction have been used to analyze the samples. The effect of silicon-metal interface contamination has been observed using an intentionally formed thin silicon oxide layer. The oxide layer was thick enough to prevent thermal silicide formation in unirradiated samples. In irradiated samples, the silicide forms thermally in spite of the presence of this oxide layer for Ni and Cr, but not for Pt. Similar results were obtained for Xe+, As+ and Si+ irradiations. We attribute this effect to ion mixing of the interfacial layer. The differences between results obtained with Ni, Cr and Pt are discussed. These results demonstrate that a low-dose irradiation can render the process of silicide formation upon thermal annealing tolerant to interfacial impurities. On the other hand, we also show that ion irradition can inhibit Pt and Ni silicide formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 139
Copyright
Copyright © Materials Research Society 1982

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Footnotes

a)

Permanent Address: Institute of Nuclear Research, Warszawa, Hoza 69, Poland.

b)

Permanent Address: Qinghua University, Beijing, The People's Republic of China.

References

REFERENCES

1.Mayer, J. W., Tsaur, B. Y., Lau, S. S. and Hung, L. S., Nucl. Inst. & Meth. 182/183, 1 (1981).Google Scholar
2. See, for example, the most recent paper by Föll, H. and Ho, P. S., J. Appl. Phys. 52, 5510 (1981), and references therein on this subject.Google Scholar
3.Wieluniski, L. S., Lien, C-D., Liu, B. X. and Nicolet, M-A., J. Vac. Sci. Technol., in press (1982).Google Scholar
4.Mäenpää, M., private communication, 1981.Google Scholar
5.Tsaur, B. Y. and Hung, L. S., Appl. Phys. Lett. 37, 922 (1980).Google Scholar
6.Baglin, J. E. E., d'Heurle, F. M. and Petersson, C. S., Appl. Phys. Lett. 36, 594 (1980).Google Scholar
7.Tsaur, B. Y. in: Thin Film Interfaces and Interactions, Baglin, J. E. E., Poate, J.M. eds. (The Electrochemical Society, Princeton 1980), Proceedings Vol. 80–2, p. 205.Google Scholar
8.Olowolafe, J. O., Nicolet, M-A. and Mayer, J. W., Thin Solid Films, 38, 143 (1976).Google Scholar