Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T10:33:06.312Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Ion Bombardment on the Dopant Diffusion During Reactive Ion Etching (RIE) of Dielectric Films Deposited on Silicon

Published online by Cambridge University Press:  25 February 2011

K. Shenai ,
N. Lewis ,
C. A. Smith  and
B. J. Baliga
K. Shenai
Affiliation:
General Electric Corporate Research and Development Center, River Road, Schenectady, NY 12301
N. Lewis
Affiliation:
General Electric Corporate Research and Development Center, River Road, Schenectady, NY 12301
C. A. Smith
Affiliation:
General Electric Corporate Research and Development Center, River Road, Schenectady, NY 12301
B. J. Baliga
Affiliation:
General Electric Corporate Research and Development Center, River Road, Schenectady, NY 12301
Get access

Abstract

We report on the results obtained from a study conducted to understand the effect of reactive ion etching (RIE) of oxide films on the dopant diffusion in ion-implanted silicon. Thermally grown oxide films on silicon were plasma etched in a CHF3/CO2 plasma. The residual silicon surface damage created during plasma etching was removed by employing a low ion-bombardment, two-step surface plasma cleaning process. The samples with oxide films etched in a wet chemical etchant provided the control for evaluating the effect of the RIE process. The samples were implanted with boron and boron was activated under various conditions to form p-n junctions to obtain a range of boron doping profiles and junction depths. Some boron doped samples were implanted with arsenic to form a heavily doped n+ region at the silicon surface. The resulting doping profiles were analysed using spreading resistance profiling (SRP), four-point probe measurements, and secondary ion-mass spectrometry (SIMS) to understand the activation, diffusion, and precipitation of various dopants. Detailed transmission electron microscopy (TEM) analysis was used to study the microstructural effects. It was observed that plasma etching of the oxide films prior to the formation of boron diffused surface regions in silicon resulted in significant changes in boron diffusion. For low boron implant doses, plasma etched silicon surfaces resulted in retarded boron diffusion. For high boron implant doses, plasma etched silicon surfaces lead to enhanced boron diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 731
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tsai, M. Y. and Streetman, B. C., J. Appl. Phys., 50, 183 (1979).CrossRefGoogle Scholar
[2] Gibbons, J. F., Proc. IEEE, 66, 9 (1972).Google Scholar
[3] Hofker, W. K., Phillips Res. Rep., no. 8, 1 (1975).Google Scholar
[4] Michel, A. E., in Rapid Thermal Processing, vol.52, Sedgwick, T. O., Seidel, T. E., and Tsaur, B. Y., Eds., Mater. Res. Soc. Symp. Proc. (Pittsburgh, PA), 3 (1986).Google Scholar
[5] Hodgson, R. T., Baglin, J. E. E., Michel, A. E., Mader, S. M., and Gelpey, J. C., in Energy Beam-Solid Interactions and Transient Thermal Processing, vol.23, Fan, J. C. C., and Johnson, N. M., Eds., Mater. Res. Soc. Symp. Proc., 253 (1984).Google Scholar
[6] Marchiando, J. F., Roitman, P., and Albers, J., IEEE Trans. Electron Devices, ED–32, 2322 (1985).CrossRefGoogle Scholar
[7] Fair, R. B., in Proc. First Int. Symp. Advanced Materials for ULSI, vol.88–19, Scott, M., Akasaka, Y., and Reif, R., Eds., The Electrochemical Soc. Symp. Proc., 123 (1988).Google Scholar
[8] Al-Marayati, S., Shenai, K., Lewis, N., and Baliga, B. J., in Extended Abstracts of the ECS Fall Meeting, Abstract No. 317, vol.88–2, 461 (1988).Google Scholar
[9] See, for instance, VLSI Technology, Sze, S. M., Ed., McGraw Hill: New York (1983).Google Scholar
[10] Baliga, B. J., Modern Power Devices, Wiley: New York (1987).Google Scholar
[11] Shenai, K., Korman, C. S., Baliga, B. J., and Piacente, P. A., General Electric TIS Rep. No. 87CRD207 (1987).Google Scholar
[12] Rumennik, V., IEEE Spectrum, 22, 42 (1985).CrossRefGoogle Scholar
[13] Coburn, J. W., Plasma Etching and Reactive Ion Etching, American Vacuum Soc. Monograph Series, New York (1982).Google Scholar
[14] Gottscho, R. A., Phys. Rev. A., 36, 2233 (1987).CrossRefGoogle Scholar
[15] Saia, R. J., Gorowitz, B., Woodruff, D., and Brown, D. M., in Proc. Sixth Symp. Plasma Processing, Mathad, G. S., Schwartz, G. C., and Gottscho, R. A., Eds., The Electrochemical Soc. Symp. Proc., 173 (1987).Google Scholar
[16] Shenai, K., Al-Marayati, S., Saia, R., Lewis, N., Smith, G. A., and Baliga, B. J., in Proc. Seventh Symp. Plasma Processing, Mathad, G. S., Schwartz, C. C., and Hess, D. W., Eds., The Electrochemical Soc. Symp. Proc., vol.88–22, 179 (1988).Google Scholar
[17] Oehrlein, G. S., Robey, S. W., Lindstrom, J. L., Chan, K. K., Jaso, M. A., and Scilla, G. J., in Proc. Seventh Symp. Plasma Processing, Mathad, G. S., Schwartz, G. C., and Hess, D. W., Eds., The Electrochemical Soc. Symp. Proc., vol.88–22, 151 (1988).Google Scholar
[18] Shenai, K., Piacente, P. A., Saia, R., Hennessy, W., Korman, C. S., and Baliga, B. J., to appear in IEDM Technical Digest, (1988).Google Scholar
[19] Kim, M. J., Cohen, S. S., Brown, D. M., Piacente, P. A., and Gorowitz, B., in IEDM Technical Digest, 134 (1984).Google Scholar
[20] Mauer, J. L., Logan, J. S., Zielinski, L. B., Schwartz, G. S., J. Vac. Sci. Technol., 15, 1734 (1978).CrossRefGoogle Scholar
[21] Gorowitz, B., Saia, R. J., and Balch, E. W., in VLSI Electronics: Microstructure Science, Einspruch, N. G., Cohen, S. S., and Gildenblatt, G., Eds., Academic Press: New York, vol.15, ch. 4, 159 (1987).Google Scholar