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The Effect of Hydrostatic Pressure on Defect Annealing in Semiconductors

Published online by Cambridge University Press:  28 February 2011

C.E. Barnes  and
G.A. Samara
C.E. Barnes
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
G.A. Samara
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We report the first study of the effect of hydrostatic pressure on the annealing of defects in Si and GaAs. It is shown that the application of hydrostatic pressure enhances the annealing rate in these materials. Analysis of the data yields the lattice volume relaxation accompanying annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 471
Copyright
Copyright © Materials Research Society 1985

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